Datasheet

TSM2302CX
Taiwan Semiconductor
2 Version: E1608
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250µA
BV
DSS
20
--
--
V
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 250µA
V
GS(TH)
0.65
0.9
1.2
V
Gate-Source Leakage Current
V
GS
= ±8V, V
DS
= 0V
I
GSS
--
--
±100
nA
Drain-Source Leakage Current
V
GS
= 0V, V
DS
= 20V
I
DSS
--
--
1
µA
V
GS
= 0V, V
DS
= 20V
T
J
= 125°C
--
--
100
Drain-Source On-State Resistance
(Note 2)
V
GS
= 4.5V, I
D
= 3.2A
R
DS(on)
--
34
65
mΩ
V
GS
= 2.5V, I
D
= 3.2A
--
45
95
Forward Transconductance
(Note 2)
V
DS
= 5V, I
D
= 3.2A
g
fs
--
19
--
S
Dynamic
(Note 3)
Total Gate Charge
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 3.2A
Q
g
--
7.8
--
nC
Total Gate Charge
V
GS
= 2.5V, V
DS
= 10V,
I
D
= 3.2A
Q
g
--
5
--
Gate-Source Charge
Q
gs
--
1
--
Gate-Drain Charge
Q
gd
--
2.5
--
Input Capacitance
V
GS
= 0V, V
DS
= 10V
f = 1.0MHz
C
iss
--
587
--
pF
Output Capacitance
C
oss
--
94
--
Reverse Transfer Capacitance
C
rss
--
64
--
Gate Resistance
f = 1.0MHz, open drain
R
g
--
1.6
--
Ω
Switching
(Note 3)
Turn-On Delay Time
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 3.2A, R
G
= 2Ω,
t
d(on)
--
5.4
--
ns
Turn-On Rise Time
t
r
--
26.4
--
Turn-Off Delay Time
t
d(off)
--
16.4
--
Turn-Off Fall Time
t
f
--
15.8
--
Source-Drain Diode
Forward Voltage
(Note 2)
V
GS
= 0V, I
S
= 3.2A
V
SD
--
--
1.2
V
Reverse Recovery Time
I
S
= 3.2A ,
dI/dt = 100A/μs
t
rr
--
19
--
ns
Reverse Recovery Charge
Q
rr
--
8
--
nC
Notes:
1. Silicon limited current only.
2. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
3. Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
PART NO.
PACKAGE
PACKING
TSM2302CX RFG
SOT-23
3,000pcs / 7” Reel