Datasheet

TSM2302CX
Taiwan Semiconductor
1 Version: E1608
N-Channel Power MOSFET
20V, 3.9A, 65mΩ
FEATURES
● Low R
DS(ON)
to minimize conductive losses
● Low gate charge for fast power switching
● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Load switch
● Backlights
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
V
DS
20
V
R
DS(on)
(max)
V
GS
= 4.5V
65
mΩ
V
GS
= 2.5V
95
Q
g
7.8
nC
SOT-23
Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
±8
V
Continuous Drain Current
(Note 1)
T
C
= 25°C
I
D
3.9
A
T
A
= 25°C
3.2
Pulsed Drain Current
I
DM
15.6
A
Total Power Dissipation
T
C
= 25°C
P
D
1.5
W
T
C
= 125°C
0.3
Total Power Dissipation
T
A
= 25°C
P
D
1
W
T
A
= 125°C
0.2
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
R
ӨJC
84
°C/W
Junction to Ambient Thermal Resistance
R
ӨJA
124
°C/W
Thermal Performance Note: R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is
determined by the user’s board design.