Datasheet

TSM2301A
Taiwan Semiconductor
Document Number: DS_P0000043 2 Version: C15
ELECTRICAL SPECIFICATIONS
(T
C
= 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT
Static
(Note 4)
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250µA BV
DSS
-20 -- --
V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250µA V
GS(th)
-0.6 -0.7 -1
V
Gate Body Leakage V
GS
= ±12V, V
DS
= 0V I
GSS
-- -- ±100
nA
Zero Gate Voltage Drain Current V
DS
= -20V, V
GS
= 0V I
DSS
-- -- 1.0
µA
Drain-Source On-State Resistance
V
GS
= -4.5V, I
D
= -2.8A
R
DS(on)
-- 90 130
mΩ
V
GS
= -2.5V, I
D
= -2.0A -- 120 190
Dynamic
(Note 5)
Gate Resistance
V
GS
= V
DS
=0V, f=1MHz
R
g
-- 7.5 -- Ω
Total Gate Charge
V
DS
= -6V, I
D
= -2.8A,
V
GS
= -4.5V
Q
g
-- 7.2 --
nC
Gate-Source Charge Q
gs
-- 2.2 --
Gate-Drain Charge Q
gd
-- 1.2 --
Input Capacitance
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 480 --
pF
Output Capacitance C
oss
-- 460 --
Reverse Transfer Capacitance C
rss
-- 10 --
Switching
(Note 6)
Turn-On Delay Time
V
DD
= -6V, R
L
= 6Ω,
V
GEN
= -4.5V,
R
G
= 6Ω
t
d(on)
-- 38 --
ns
Turn-On Rise Time t
r
-- 25 --
Turn-Off Delay Time t
d(off)
-- 43 --
Turn-Off Fall Time t
f
-- 5 --
Source-Drain Diode
(Note 4)
Forward On Voltage I
S
= -1A, V
GS
= 0V V
SD
-- -0.7 -1.3 V
Notes:
1. Current limited by package.
2. Pulse width limited by the maximum junction temperature.
3. Surface Mounted on a 1 in
2
pad of 2
OZ
Cu, t ≤ 10 sec.
4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%.
5. For DESIGN AID ONLY, not subject to production testing.
6. Switching time is essentially independent of operating temperature.