Datasheet

TSM1NB60
Taiwan Semiconductor
Document Number: DS_P0000038 2 Version: D1706
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
(Note 5)
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250µA
BV
DSS
600
--
--
V
Drain-Source On-State Resistance
V
GS
= 10V, I
D
= 0.5A
R
DS(ON)
--
8
10
Ω
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
V
GS(TH)
2.5
3.5
4.5
V
Zero Gate Voltage Drain Current
V
DS
= 600V, V
GS
= 0V
I
DSS
--
--
10
µA
Gate Body Leakage
V
GS
= ±30V, V
DS
= 0V
I
GSS
--
--
±100
nA
Forward Transfer Conductance
V
DS
= 10V, I
D
= 0.5A
g
fs
--
0.8
--
S
Dynamic
(Note 6)
Total Gate Charge
V
DS
= 480V, I
D
= 1A,
V
GS
= 10V
Q
g
--
6.1
--
nC
Gate-Source Charge
Q
gs
--
1.4
--
Gate-Drain Charge
Q
gd
--
3.3
--
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
C
iss
--
138
--
pF
Output Capacitance
C
oss
--
17.1
--
Reverse Transfer Capacitance
C
rss
--
4.2
--
Gate Resistance
F = 1MHz, open drain
R
g
--
12.5
--
Ω
Switching
(Note 7)
Turn-On Delay Time
V
DD
= 300V, R
G
=25Ω
I
D
= 1A, V
GS
= 10V
t
d(on)
--
7.7
--
ns
Turn-On Rise Time
t
r
--
6.8
--
Turn-Off Delay Time
t
d(off)
--
15.3
--
Turn-Off Fall Time
t
f
--
14.9
--
Source-Drain Diode
(Note 5)
Diode Forward Voltage
I
S
= 1A, V
GS
= 0V
V
SD
--
0.9
1.4
V
Source Current
Integral reverse diode
In the MOSFET
I
S
--
--
1
A
Source Current (Pulse)
I
SM
--
--
4
Notes:
1. Current limited by package.
2. Pulse width limited by the maximum junction temperature.
3. L = 10mH, I
AS
= 1A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25
o
C.
4. I
SD
≤1A , V
DD
≤BV
DSS
, di/dt≤200A/us , Starting T
J
= 25
o
C.
5. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%.
6. For DESIGN AID ONLY, not subject to production testing.
7. Switching time is essentially independent of operating temperature.