Datasheet

TSM1N80
Taiwan Semiconductor
Document Number: DS_P0000037 2 Version: B15
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 1mA BV
DSS
800 -- -- V
Drain-Source On-State Resistance V
GS
= 10V, I
D
= 0.15A R
DS(ON)
-- 18 21.6 Ω
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250µA V
GS(TH)
3 -- 5 V
Zero Gate Voltage Drain Current V
DS
= 800V, V
GS
= 0V I
DSS
-- -- 25 µA
Gate Body Leakage V
GS
= ±30V, V
DS
= 0V I
GSS
-- -- ±10 µA
Forward Transconductance V
DS
= 40V, I
D
= 0.1A g
fs
-- 0.36 -- S
Diode Forward Voltage I
S
= 0.2A, V
GS
= 0V V
SD
-- -- 1.4 V
Dynamic
(Note 3)
Total Gate Charge
V
DS
= 640V, I
D
= 0.3A,
V
GS
= 10V
Q
g
-- 5 6
nC
Gate-Source Charge Q
gs
-- 1 --
Gate-Drain Charge Q
gd
-- 2 --
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 155 200
pF
Output Capacitance C
oss
-- 20 26
Reverse Transfer Capacitance C
rss
-- 2.7 4
Switching
(Note 4)
Turn-On Delay Time
V
GS
= 10V, I
D
= 0.3A,
V
DS
= 400V, R
G
= 25Ω
t
d(on)
-- 10 30
ns
Turn-On Rise Time t
r
--
20
50
Turn-Off Delay Time t
d(off)
-- 16 45
Turn-Off Fall Time t
f
-- 25 60
Note:
1. Pulse test: pulse width <=300uS, duty cycle <=2%
2. (V
DD
= 50V, I
AS
=0.8A, L=170mH, R
G
=25Ω)
3. For design reference only, not subject to production testing.
4. Switching time is essentially independent of operating temperature.