Datasheet
TSC966CW
Taiwan Semiconductor
2 Version: F1801
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
(Note 1)
Collector-Base voltage
I
C
=50μA
BV
CBO
600
--
--
V
Collector-Emitter Saturation Voltage
I
C
=100μA, V
BE
=0
BV
CES
600
--
--
V
Collector-Emitter breakdown voltage
I
C
=1mA
BV
CEO
400
--
--
V
Emitter-Base breakdown voltage
I
E
=50μA
BV
EBO
7
--
--
V
Emitter cut-off current
V
EB
=7V
I
EBO
--
--
1.5
µA
Collector cut-off current
V
CB
=600V
I
CBO
--
--
0.5
µA
Collector-Emitter Cutoff Current
V
CE
=400V
I
CEO
--
--
1
µA
Collector-Emitter saturation voltage
I
C
=50mA, I
B
=5mA
V
CE(SAT)
---
--
0.5
V
Base-Emitter saturation voltage
I
C
=50mA, I
B
=5mA
V
BE(SAT)
--
--
1
V
DC Current Gain
V
CE
=5V, I
C
=1mA
h
FE
1
100
--
--
V
CE
=5V, I
C
=20mA
h
FE
2
90
--
300
Transition Frequency
V
CE
= 10V, I
E
=20mA
f
T
50
--
--
MHz
Output Capacitance
V
CB
=20V, f =1MHz
Cob
--
--
7
pF
Notes:
1. Pulse test: ≤ 380µs, duty cycle ≤ 2%
2. For DESIGN AID ONLY, not subject to production testing.
ORDERING INFORMATION
PART NO.
PACKAGE
PACKING
TSC966CW RPG
SOT-223
2,500pcs / 13”Reel