Datasheet

TSA874
PNP Silicon Planar High Voltage Transistor
Document Number: DS_P0000260 1 Version: H15
SOT
-
223
PRODUCT SUMMARY
BV
CBO
-500V
BV
CEO
-500V
I
C
-150mA
V
CE(SAT)
-0.5V @ I
C
/ I
B
= -50mA / -10mA
Features
● Low Saturation Voltages
● Excellent gain characteristics specified up to
-50mA
Ordering Information
Part No. Package Packing
TSA874CW RPG SOT-223 2.5Kpcs / 13” Reel
Note: “G” denotes for Halogen Free
Structure
● Epitaxial Planar Type
● PNP Silicon Transistor
Absolute Maximum Rating (Ta = 25°C unless otherwise noted)
Parameter Symbol Limit Unit
Collector-Base Voltage V
CBO
-500 V
Collector-Emitter Voltage V
CEO
-500 V
Emitter-Base Voltage V
EBO
-5 V
Collector Current
DC
I
C
-150
mA
Pulse -500
Total Power Dissipation P
tot
1 W
Operating Junction Temperature T
J
+150 °C
Operating Junction and Storage Temperature Range T
STG
- 55 to +150 °C
Electrical Specifications (Ta = 25°C unless otherwise noted)
Parameter Conditions Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage I
C
= -100uA, I
E
= 0 BV
CBO
-500 -- -- V
Collector-Emitter Breakdown Voltage I
C
= -10mA, I
B
= 0 BV
CEO
-500 -- -- V
Emitter-Base Breakdown Voltage I
E
= -100uA, I
C
= 0 BV
EBO
-5 -- -- V
Collector Cutoff Current V
CB
= -120V, I
E
= 0 I
CBO
-- -- -100 nA
Emitter Cutoff Current V
EB
= -6V, I
C
= 0 I
EBO
-- -- -100 nA
Collector-Emitter Saturation Voltage
I
C
= -20mA, I
B
= -2mA V
CE(SAT)
1 -- -- -0.2
V
I
C
= -50mA, I
B
= -10mA V
CE(SAT)
2 -- -0.5
Base-Emitter Saturation Voltage I
C
= -50mA, I
B
= -10mA V
BE(SAT)
-- -- -0.9 V
Base-Emitter on Voltage V
CE
= -10V, I
C
= -50mA V
BE(ON
)
-- -- -0.9 V
DC Current Transfer Ratio
V
CE
= -10V, I
C
= -1mA h
FE
1 150 -- 300
V
CE
= -10V, I
C
= -50mA h
FE
2 80 -- 300
V
CE
= -10V, I
C
= -100mA h
FE
3 -- 15 --
Transition Frequency V
CE
=10V, I
C
=-100mA f
T
-- 50 -- MHz
Output Capacitance V
CB
= 20V, f=1MHz Cob -- -- 8 pF
Turn On Time V
CE
= -100V, I
C
= -50mA
I
B1
=-5mA, I
B2
=-10mA
Ton -- 110 -- nS
Turn Off Time Toff -- 1500 -- nS
Pin
Definition
:
1. Base
2. Collector
3. Emitter