Datasheet

TS5205
Taiwan Semiconductor
Document Number: DS_P0000197 3 Version: I15
ELECTRICAL SPECIFICATIONS
(V
IN
=Vo+1V, Io=100µA, COUT=1µF, Vce≥2V,TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
Enable Function
Enable Input Logic-Low Voltage Regulation shutdown -- -- 0.4 V
Enable Input Logic-Low Voltage Regulation enable 2.0 -- -- V
Enable input Current
V
IL
≤ 0.4V -- 0.01 -1 µA
V
IH
≥ 2.0V -- 5 20 V
Note:
1. Exceeding the absolute maximum rating may damage the device.
2. The maximum allowable power dissipation at any T
A
is P
D(MAX)
= [T
J(MAX)
- Ta] + R
θJA
. Exceeding the maximum allowable
power dissipation will result in excessive die temperature, and the regulator will go into thermal shutdown.
3. The device is not guaranteed to function outside its operating rating.
4. Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range.
5. Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 1mA to 150mA (5V version) and 1mA to 120mA (V
OUT
<5V version). Changes in output
voltage due to heating effects are covered by the thermal regulation specification.
6. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value
measured at 1V differential.
7. Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
8. Thermal regulation is defined as the change in output voltage at a time “t” after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a 150mA load pulse at V
IN
=16V for t=10ms.