Datasheet

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SR102 – SR115

Taiwan Semiconductor

1 Version: G2104

1A, 20V - 150V Schottky Barrier Rectifier

FEATURES

● AEC-Q101 qualified available

● Low forward voltage drop

● Low power loss, high efficiency

● Guard ring for overvoltage protection

● High surge current capability

● RoHS Compliant

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● Switching mode power supply (SMPS)

● Adapters

● DC to DC converter

MECHANICAL DATA

● Case: DO-204AL (DO-41)

● Molding compound meets UL 94V-0 flammability rating

● Terminal: Pure tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 2 whisker test

● Polarity: Indicated by cathode band

● Weight: 0.330g (approximately)

KEY PARAMETERS

PARAMETER

VALUE

UNIT

RRM

20 - 150

FSM

J MAX

125, 150

°C

Package

DO-204AL (DO-41)

Configuration

Single die

DO-204AL (DO-41)

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

102

103

104

105

106

109

110

115

UNIT

Marking code on the device

102

103

104

105

106

109

110

115

Repetitive peak reverse voltage

RRM

100

150

Reverse voltage, total rms value

R(RMS)

105

Forward current

Surge peak forward current, 8.3ms

single half sine wave superimposed

on rated load

FSM

Critical rate of rise of off-state voltage

dv/dt

10,000

V/µs

Junction temperature

-55 to +125

-55 to +150

°C

Storage temperature

STG

-55 to +150

°C

Summary of content (6 pages)

PAGE 1
SR102 – SR115 Taiwan Semiconductor 1A, 20V - 150V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low forward voltage drop Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 1 A VRRM 20 - 150 V IFSM 30 A TJ MAX 125, 150 °C Package DO-204AL (DO-41) Configuration Single die ● Switching mode power supp
PAGE 2
SR102 – SR115 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJA 90 °C/W Junction-to-ambient thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS (1) Reverse current @ rated VR (2) SR102 SR103 SR104 SR105 SR106 SR109 SR110 SR115 SR102 SR103 SR104 SR105 SR106 SR109 SR110 SR115 SR102 SR103 SR104 SR105 SR106 SR109 SR110 SR115 SR102 SR103 SR104 SR105 SR106 SR109 SR110 SR115 IF = 1A, TJ = 25°C SYMBOL VF TYP MA
PAGE 3
SR102 – SR115 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 SR102-SR104 CAPACITANCE (pF) SR105 - SR115 1 SR105-SR106 100 SR109-SR115 SR102 - SR104 0 f=1.0MHz Vsig=50mVp-p 10 25 50 75 100 125 150 0.1 1 LEAD TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C TJ=75°C 0.01 TJ=25°C 0.
PAGE 4
SR102 – SR115 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Characteristics TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.
PAGE 5
SR102 – SR115 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-204AL (DO-41) MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: G2104
PAGE 6
SR102 – SR115 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only.