Datasheet

S8GC – S8MC
Taiwan Semiconductor
2 Version: G2210
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-lead thermal resistance
R
ӨJL
12.5
°C/W
Junction-to-ambient thermal resistance
R
ӨJA
44.0
°C/W
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP
MAX
UNIT
Forward voltage
(1)
I
F
= 8A, T
J
= 25°C
V
F
-
0.985
V
Reverse current @ rated V
R
(2)
T
J
= 25°C
I
R
-
10
µA
T
J
= 125°C
-
250
µA
Junction capacitance
1MHz, V
R
= 4.0V
C
J
48
-
pF
Notes:
1. Pulse test with PW = 0.3ms
2. Pulse test with PW = 30ms
ORDERING INFORMATION
ORDERING CODE
(1)
PACKAGE
PACKING
S8xC
DO-214AB (SMC)
3,000 / Tape & Reel
Notes:
1. “x” defines voltage from 400V(S8GC) to 1000V(S8MC)