Datasheet
MBR3035PT – MBR30200PT
Taiwan Semiconductor
2 Version: K2103
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
MBR
3035
PT
MBR
3045
PT
MBR
3050
PT
MBR
3060
PT
MBR
3090
PT
MBR
30100
PT
MBR
30150
PT
MBR
30200
PT
UNIT
Critical rate of rise of off-state
voltage
dV/dt
10,000
V/μs
Junction temperature
T
J
-55 to +150
°C
Storage temperature
T
STG
-55 to +150
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-case thermal resistance
R
ӨJC
1.4
°C/W
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP
MAX
UNIT
Forward voltage per diode
(1)
MBR3035PT
MBR3045PT
I
F
= 15A, T
J
= 25°C
V
F
-
-
V
MBR3050PT
MBR3060PT
-
0.75
V
MBR3090PT
MBR30100PT
-
0.85
V
MBR30150PT
-
0.95
V
MBR30200PT
-
1.05
V
MBR3035PT
MBR3045PT
I
F
= 30A, T
J
= 25°C
-
0.82
V
MBR3050PT
MBR3060PT
-
-
V
MBR3090PT
MBR30100PT
-
-
V
MBR30150PT
-
1.02
V
MBR30200PT
-
1.10
V
MBR3035PT
MBR3045PT
I
F
= 15A, T
J
= 125°C
-
0.60
V
MBR3050PT
MBR3060PT
-
0.65
V
MBR3090PT
MBR30100PT
-
0.75
V
MBR30150PT
-
0.92
V
MBR30200PT
-
-
V
MBR3035PT
MBR3045PT
I
F
= 30A, T
J
= 125°C
-
0.73
V
MBR3050PT
MBR3060PT
-
-
V
MBR3090PT
MBR30100PT
-
-
V
MBR30150PT
-
0.98
V
MBR30200PT
-
-
V
Notes:
1. Pulse test with PW = 0.3ms