Datasheet

ES3A – ES3J
Taiwan Semiconductor
3 Version: N2102
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
Fig.5 Maximum Non-Repetitive Forward Surge Current
0
1
2
3
4
25 50 75 100 125 150
0
15
30
45
60
75
90
1 10 100
f=1.0MHz
Vsig=50mVp-p
ES3F - ES3J
ES3A - ES3D
0.1
1
10
100
1000
10 20 30 40 50 60 70 80 90 100
T
J
=25°C
T
J
=125°C
T
J
=75°C
0.1
1
10
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Pulse width 300μs
1% duty cycle
ES3H - ES3J
ES3F - ES3G
ES3A - ES3D
0
10
20
30
40
50
60
70
80
90
100
110
1 10 100
8.3ms single half sine wave
CAPACITANCE (pF)
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD CURRENT (A)
(A)
0.001
0.01
0.1
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Pulse width
T
J
=25°C
T
J
=125°C
UF1DLW
FORWARD VOLTAGE (V)
AVERAGE FORWARD CURRENT (A)
REVERSE VOLTAGE (V)
LEAD TEMPERATURE (°C)
NUMBER OF CYCLES AT 60 Hz
PEAK FORWARD SURGE CURRENT (A)