Datasheet

ES3A – ES3J
Taiwan Semiconductor
2 Version: N2102
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-lead thermal resistance
R
ӨJL
12
°C/W
Junction-to-ambient thermal resistance
R
ӨJA
47
°C/W
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP
MAX
UNIT
Forward voltage
(1)
ES3A
ES3B
ES3C
ES3D
I
F
= 3A, T
J
= 25°C
V
F
-
0.95
V
ES3F
ES3G
-
1.30
V
ES3H
ES3J
-
1.70
V
Reverse current @ rated V
R
(2)
T
J
= 25°C
I
R
-
10
µA
T
J
= 100°C
-
500
µA
Junction capacitance
ES3A
ES3B
ES3C
ES3D
1MHz, V
R
= 4.0V
C
J
45
-
pF
ES3F
ES3G
ES3H
ES3J
30
-
pF
Reverse recovery time
I
F
= 0.5A, I
R
= 1.0A,
I
rr
= 0.25A
t
rr
-
35
ns
Notes:
1. Pulse test with PW = 0.3ms
2. Pulse test with PW = 30ms
ORDERING INFORMATION
ORDERING CODE
(1)
PACKAGE
PACKING
ES3x
DO-214AB (SMC)
3,000 / Tape & Reel
Notes:
1. “x” defines voltage from 50V(ES3A) to 600V(ES3J)