Datasheet

ManualsBrandsTaiwan Semiconductor ManualsActive ComponentsTransistor (BJT) - Discrete TO 92 Bulk

BC546A/B/C - BC550A/B/C

Taiwan Semiconductor

1 Version:D2112

500mW, NPN Small Signal Transistor

FEATURES

● Low power loss, high efficiency

● Ideal for automated placement

● High surge current capability

● RoHS Compliant

APPLICATIONS

● Switching mode power supply (SMPS)

● Adapters

● Lighting application

● On-board DC/DC converter

MECHANICAL DATA

● Case: TO-92

● Molding compound meets UL 94 V-0 flammability rating

● Terminal: Matte tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 1A whisker test

● Weight: 190mg (approximately)

KEY PARAMETERS

PARAMETER

VALUE

UNIT

CBO

30 - 80

CEO

30 - 65

EBO

100

220 - 800

Package

TO-92

Configuration

Single Die

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

UNIT

Marking code on the device

(1)

BC5xA/B/C

Power dissipation

500

Junction temperature

-65 to +150

°C

Storage temperature

STG

-65 to +150

°C

Notes:

1. "x" is device code from "46" to "50", "MARKING" should follow the "PART NO."

Summary of content (5 pages)

PAGE 1
BC546A/B/C - BC550A/B/C Taiwan Semiconductor 500mW, NPN Small Signal Transistor FEATURES ● ● ● ● KEY PARAMETERS Low power loss, high efficiency Ideal for automated placement High surge current capability RoHS Compliant PARAMETER VALUE UNIT VCBO 30 - 80 V VCEO 30 - 65 V VEBO 6 V IC 100 mA hFE 220 - 800 APPLICATIONS ● ● ● ● Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter Package TO-92 Configuration Single Die MECHANICAL DATA ● ● ● ● ● Case:
PAGE 2
BC546A/B/C - BC550A/B/C Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE 80 UNIT 50 V BC548,BC549 30 V BC546 65 V 45 V BC548,BC549 30 V BC546 6 V 6 V 6 V BC546 Collector-base voltage, emitter open Collector-emitter voltage, base open Emitter-base voltage, collector open BC547,BC550 VCBO BC547,BC550 VCEO BC547,BC550 VEBO BC548,BC549 V Collector current IC 100 mA Peak collector current ICM 200 mA ELECTRICAL SPECI
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BC546A/B/C - BC550A/B/C Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Static Characteristic Fig.2 Transfer Characteristic 100 100 IB = 350μA 80 Ic(mA), Collector Current IC[mA], Collector Current IB = 400μA IB = 300μA IB = 250μA 60 IB = 200μA IB = 150μA 40 IB = 100μA 20 VCE=5V 10 1 IB = 50μA 0 0 0 4 8 12 16 0.4 20 0.6 VCE(V), Collector Emitter Voltage 0.8 1.0 VBE(V), Base Emitter Voltage Fig.3 DC Current Gain Fig.
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BC546A/B/C - BC550A/B/C Taiwan Semiconductor PACKAGE OUTLINE DIMENSION TO-92 Bulk DIM. A B C D E F G H I Unit(mm) Min Max 4.40 5.10 4.30 4.70 12.50 14.50 1.17 1.37 0.35 0.55 1.17 1.37 0.59 1.40 0.29 0.51 3.30 4.10 Unit(inch) Min Max 0.173 0.201 0.169 0.185 0.492 0.046 0.054 0.014 0.022 0.046 0.054 0.023 0.055 0.011 0.020 0.130 0.161 TO-92 Ammo DIM. A B C D E G H I 4 Unit(mm) Min Max 4.30 4.70 4.30 4.70 12.50 2.20 2.80 0.35 0.55 1.00 1.20 0.29 0.51 3.30 3.70 Unit(inch) Min Max 0.169 0.185 0.169 0.
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BC546A/B/C - BC550A/B/C Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only.