Datasheet

BC546A/B/C - BC550A/B/C
Taiwan Semiconductor
2 Version:C1703
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Collector-base voltage, emitter open
BC546
V
CBO
80
V
BC547,BC550
50
BC548,BC549
30
Collector-emitter voltage, base open
BC546
V
CEO
65
V
BC547,BC550
45
BC548,BC549
30
Emitter-base voltage, collector open
BC546
V
EBO
6
V
BC547,BC550
6
BC548,BC549
6
Collector current
I
C
100
mA
Peak collector current
I
CM
200
mA
Junction temperature
T
J
-65 to +150
°C
Storage temperature
T
STG
-65 to +150
°C
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Collector cutoff
current, emitter
open
V
CB
= 30 V
I
CBO
-
-
15
nA
Emitter cutoff
current,
collector open
V
EB
= 5 V
I
EBO
-
-
100
nA
Collector-base
voltage,
emitter open
I
C
= 100 µA
BC546
V
CBO
80
-
-
V
BC547,BC550
50
-
-
BC548,BC549
30
-
-
Collector-
emitter voltage,
base open
I
C
= 10 mA
BC546
V
CEO
65
-
-
V
BC547,BC550
45
-
-
BC548,BC549
30
-
-
Emitter-base
voltage,
collector open
I
E
= 100 µA
BC546
V
EBO
6
-
-
V
BC547,BC550
6
-
-
BC548,BC549
6
-
-
DC current
gain
V
CE
= 5 V,
I
C
= 2 mA
Current gain group :A
B
C
h
FE
110
-
220
200
-
450
420
-
800