Datasheet

ManualsBrandsTaiwan Semiconductor ManualsDiodesSchottky Diode 250mA SOD-323F

BAS316WS

Taiwan Semiconductor

1 Version:D1709

250mA, 100V High-Speed Switching SMD Diode

FEATURES

● Low power loss, high efficiency

● Ideal for automated placement

● High surge current capability

● Compliance to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● Switching mode power supply (SMPS)

● Adapters

● Lighting application

● On-board DC/DC converter

MECHANICAL DATA

● Case: SOD-323F

● Molding compound meets UL 94 V-0 flammability rating

● Moisture sensitivity level: level 1, per J-STD-020

● Packing code with suffix "G" means green compound

(halogen-free)

● Terminal: Matte tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 1A whisker test

● Polarity: Indicated by cathode band

● Weight: 4.6 ± 0.5mg (approximately)

KEY PARAMETERS

PARAMETER

VALUE

UNIT

F(AV)

250

RRM

100

at I

=150mA

1.25

Max.

150

°C

Package

SOD-323F

Configuration

Single dice

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

BAS316WS

UNIT

Marking code on the device

Repetitive peak reverse voltage

RRM

100

Forward current

F(AV)

250

Non-repetitive peak forward surge

current

Pulse Width = 1 μs

FRM

4.0

Pulse Width = 1 ms

1.0

Junction temperature range

-65 to +150

°C

Storage temperature range

STG

-65 to +150

°C

Summary of content (5 pages)

PAGE 1
BAS316WS Taiwan Semiconductor 250mA, 100V High-Speed Switching SMD Diode FEATURES KEY PARAMETERS ● ● ● ● Low power loss, high efficiency Ideal for automated placement High surge current capability Compliance to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF(AV) 250 mA VRRM 100 V VF at IF=150mA 1.25 V TJ Max.
PAGE 2
BAS316WS Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN MAX - 0.715 - 0.855 - 1.000 - 1.250 100 0.03 CJ - 1.5 pF trr - 4.0 ns IF = 1.
PAGE 3
BAS316WS Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Typical Forward Characteristics Fig.2 Reverse Current As A Function of Junction Temperature 100 VR=75V 250 Reverse Current (uA) Instantaneous Forward Current (mA) 300 200 150 100 VR=75V 10 Max VR=25V 1 0.1 typ 50 typ 0.01 0 0 0.4 0.8 1.2 0 1.6 20 40 60 100 120 140 160 180 200 Junction Temperature (oC) Instantaneous Forward Voltage (V) Fig.3 Admissible Power Dissipation Curve Fig.
PAGE 4
BAS316WS Taiwan Semiconductor PACKAGE OUTLINE DIMENSION SOD-323F DIM. Unit (mm) Unit (inch) Min Max Min Max A 1.15 1.35 0.045 0.053 B 2.30 2.80 0.091 0.110 C 0.25 0.40 0.010 0.016 D 1.60 1.80 0.063 0.071 E 0.80 1.10 0.031 0.043 F 0.05 0.25 0.002 0.010 SUGGEST PAD LAYOUT DIM. 4 Unit (mm) Unit (inch) Typ. Typ. A 0.63 0.025 B 0.83 0.033 C 1.60 0.063 D 2.86 0.
PAGE 5
BAS316WS Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document.