User Manual

ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
= 25°C)
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
EMITTER
I
F
= 40 mA V
F
1.7 V
Forward Voltage
Reverse Current V
R
= 2.0 V I
R
100 µA
Peak Emission Wavelength I
F
= 20 mA
!
PE
940 nm
SENSOR
I
C
= 1 mA BV
CEO
30 V
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage I
E
= 0.1 mA BV
ECO
5—V
Collector-Emitter Dark Current V
CE
= 10 V, I
F
= 0 mA I
CEO
100 nA
COUPLED
On-state Collector Current I
F
= 40 mA, V
CE
= 5 V
I
C(ON)
mA
QRB1133 D = .150”
(5,6)
0.20
QRB1134 0.60
Collector-Emitter
I
F
= 20 mA, I
C
= 0.5 mA V
CE (SAT)
0.4 V
Saturation Voltage
Rise Time V
CE
= 5 V, R
L
= 100 " t
r
—8
µs
Fall Time I
C(ON)
= 5 mA t
f
—8
Cross Talk I
F
= 40 mA, V
CE
= 5 V
(7)
I
CX
1.00 µA
www.fairchildsemi.com 2 OF 4 7/02/01 DS300351
Parameter Symbol Rating Units
Operating Temperature T
OPR
-40 to +85
°C
Storage Temperature T
STG
-40 to +85
°C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec
°C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec
°C
EMITTER
Continuous Forward Current I
F
50 mA
Reverse Voltage V
R
5V
Power Dissipation
(1)
P
D
100 mW
SENSOR
Collector-Emitter Voltage V
CEO
30 V
Emitter-Collector Voltage V
ECO
50 V
Collector Current I
C
20 mA
Power Dissipation
(1)
P
D
100 mW
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
NOTES
1. Derate power dissipation linearly 1.67 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron
1/16” (1.6mm) minimum from housing.
5. D is the distance from the assembly face to the reflective surface.
6. Measured using an Eastman Kodak neutral test card with 90% diffused reflecting surface.
7. Cross talk is the photo current measured with current to the input diode and no reflecting surface.
PHOTOTRANSISTOR
REFLECTIVE OBJECT SENSORS
QRB1133 QRB1134