User Manual

0.210 (5.33)
0.420 (10.67)
0.328 (8.33)
0.373 (9.47)
0.703 (17.86)
0.150 (3.81)
MIN
0.603 (15.32)
0.226 (5.74)
0.150 (3.81)
NOM
FUNCTION
(C) COLLECTOR
(E) EMITTER
(K) CATHODE
(A)
(K)
(E)
(C)
REFLECTIVE
SURFACE
0.020 (0.51)
4X
0.300 (7.62)
(A) ANODE
WHITE
BLUE
ORANGE
WIRE COLOR
GREEN
24.0 (609.60)
MIN #26 AWG
ES
PACKAGE DIMENSIONS
FEATURES
• Phototransistor output
• High Sensitivity
• Low cost plastic housing
• #26 AWG, 24 inch PVC wire termination
• Infrared transparent plastic covers for dust protection
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
AK CE
SCHEMATIC
2001 Fairchild Semiconductor Corporation
DS300351 7/02/01 1 OF 4 www.fairchildsemi.com
DESCRIPTION
The QRB1133/1134 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converg-
ing optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective
object passes within its field of view. The area of the optimum response approximates a circle .200” in diameter.
PHOTOTRANSISTOR
REFLECTIVE OBJECT SENSORS
QRB1133 QRB1134

Summary of content (4 pages)