User Manual

240-Pin Unbuffered DIMM DDR3 SDRAM
http://www.supertalent.com/oem Products and Specifications discussed herein are subject to change without notice
2 © 2006 Super Talent Tech., Corporation.
1.0 Features
• JEDEC standard VDD = VDDQ = 1.5V +/- 0.075V Power Supply
• 1.5V centered-terminated push-pull I/O
• Programmable CAS latencies (5,6,7,8,9,10), Burst Length (4 & 8) and Burst Type
• Auto Refresh (CRB) and Self Refresh
• Bi-directional Differential Data Strobe
• Off Chip Driver (OCD) impedance adjustment
• On-Die termination using ODT pin
• 8 independent internal bank
• Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C - support High Temperature
Self-Refresh rate enable feature
• Serial presence detect with EEPROM
• DIMM Dimension (Nominal) 30.00 mm high, 133.35 mm wide
• Based on JEDEC standard reference Raw Cards Lay out.
• RoHS compliant
• Gold plated contacts
2.0 Ordering Information
These products can be ordered as individual 2GB DIMMs or as 4GB kits (2x 2GB).
Part number* Density
Module
Organization
Component
composition
Component
PKG
Module
Rank
Description
W1066UB2Gx 2GB 256Mx64 128Mx8*16 TFBGA 2
2GB 2Rx8
PC3-8500U
W1066UX4Gx
4GB Kit
(2x 2GB)
2x 256Mx64 128Mx8*16 TFBGA 2
2GB 2Rx8
PC3-8500U
W1333UB2Gx 2GB 256Mx64 128Mx8*16 TFBGA 2
2GB 2Rx8
PC3-10600U
W1333UX4Gx
4GB Kit
(2x 2GB)
2x 256Mx64 128Mx8*16 TFBGA 2
2GB 2Rx8
PC3-10600U
*Last digit of part number indicates DRAM chip brand: E = Elpida; M = Micron; Q = Qimonda; S = Samsung.
3.0 Key Timing Parameters
DDR3-1333 DD3-1066 Unit
CL-tRCD-tRP
9-9-9
7-7-7 tCK
CAS Latency
9
7 tCK
tCK(min)
1.5
1.875 ns
tRCD(min)
13.5
13.125 ns
tRP(min)
13.5
13.125 ns
tRAS(min)
36
37.5 ns
tRC(min)
49.5
50.625 ns
4.0 Absolute Maximum DC Rating
Symbol Parameter Rating Units
V
in ,
Vout Voltage on any pin relative to V
SS
-0.4 ~ 1.975 V
V
DD
Voltage on V
DD
& V
DDQ
supply relative to V
ss
-0.4 ~ 1.975 V
V
DDQ
Short circuit current -0.4 ~ 1.975 V
V
DDL
Power dissipation -0.4 ~ 1.975 V