Datasheet

Z01 Characteristcs
3/8
Figure 1. Maximum power dissipation
versus RMS on-state current
(full cycle)
Figure 2. RMS on-state current versus
ambient temperature (full cycle)
P(W)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.00
0.25
0.50
0.75
1.00
1.25
1.50
I (A)
T(RMS)
0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I (A)
T(RMS)
R=
(SOT-223)
th(j-a)
R
th(j-t)
R=
(TO-92)
th(j-a)
R
th(j-l)
T (°C)
amb
Figure 3. RMS on-state current versus
ambient temperature (full cycle)
Figure 4. Relative variation of thermal
impedance versus pulse duration
I (A)
T(RMS)
0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
R = 60°C/W
(SOT-223)
th(j-a)
R = 150°C/W
(TO-92)
th(j-a)
T (°C)
amb
K=[Z /R
th(j-a) th(j-a)
]
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00
t (s)
p
Z01xxA
Z01xxN
Figure 5. Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
Figure 6. Surge peak on-state current versus
number of cycles
-40 -20 0 20 40 60 80 100 120 140
0.0
0.5
1.0
1.5
2.0
2.5
I,I,I[T] /
GTHL j
I , I , I [T =25°C]
GTHL j
T (°C)
j
I
GT
I
H
&I
L
1 10 100 1000
0
1
2
3
4
5
6
7
8
9
One cycle
t=20ms
I (A)
TSM
Number of cycles
Non repetitive
T initial = 25°C
j
Repetitive
T = 25°C
amb