Datasheet

Electrical specifications VNQ5160K-E
8/30 Doc ID 13349 Rev 7
2.2 Thermal data
2.3 Electrical characteristics
8V<V
CC
<36V; -40°C< T
j
<150°C, unless otherwise specified
T
j
Junction operating temperature -40 to 150 °C
T
stg
Storage temperature - 55 to 150 °C
Table 4. Absolute maximum ratings (continued)
Symbol Parameter Value Unit
Table 5. Thermal data
Symbol Parameter Max. value Unit
R
thj-case
Thermal resistance junction-case
(with one channel on)
8°C/W
R
thj-amb
Thermal resistance junction-ambient See Figure 32. °C/W
Table 6. Power section
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CC
Operating supply voltage 4.5 13 36 V
V
USD
Undervoltage shutdown 3.5 4.5 V
V
USDhyst
Undervoltage shutdown
hysteresis
0.5 V
R
ON
On-state resistance
(1)
1. For each channel.
I
OUT
=1A; T
j
=25°C
I
OUT
=1A; T
j
=150°C
I
OUT
=1A; V
CC
=5V; T
j
=25°C
160
320
210
m
m
m
V
clamp
Clamp voltage I
S
=20 mA 41 46 52 V
I
S
Supply current
Off-state; V
CC
=13V; V
IN
=V
OUT
=0V;
T
j
=25°C
On-state; V
IN
=5V; V
CC
=13V;
I
OUT
=0A
2
(2)
8
2. PowerMOS leakage included.
5
(2)
14
A
mA
I
L(off1)
Off-state output current
(1)
V
IN
=V
OUT
=0V; V
CC
=13V; T
j
=25°C
V
IN
=V
OUT
=0V; V
CC
=13V; T
j
=125°C
0
0
0.01 3
5
A
A
I
L(off2)
Off-state output current
(1)
V
IN
=0V; V
OUT
=4V -75 0 A
V
F
Output - V
CC
diode
voltage
(1)
-I
OUT
=0.6A; T
j
=150°C 0.7 V