Datasheet

VNN7NV04P-E, VNS7NV04P-E Electrical specifications
Doc ID 15632 Rev 4 7/29
2.2 Thermal data
2.3 Electrical characteristics
-40 °C < T
j
< 150 °C, unless otherwise specified.
Table 3. Thermal data
Symbol Parameter
Value
Unit
SOT-223 SO-8
R
thj-case
Thermal resistance junction-case max 18 °C/W
R
thj-lead
Thermal resistance junction-lead max 27 °C/W
R
thj-amb
Thermal resistance junction-ambient max 96
(1)
1. When mounted on a standard single-sided FR4 board with 0.5 mm
2
of Cu (at least 35 µm thick) connected
to all DRAIN pins.
90
(1)
°C/W
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min Typ Max Unit
Off
V
CLAMP
Drain-source clamp
voltage
V
IN
=0V; I
D
= 3.5 A 40 45 55 V
V
CLTH
Drain-source clamp
threshold voltage
V
IN
=0V; I
D
=2mA 36 V
V
INTH
Input threshold voltage V
DS
=V
IN
; I
D
=1mA 0.5 2.5 V
I
ISS
Supply current from input
pin
V
DS
=0V; V
IN
= 5 V 100 150 µA
V
INCL
Input-source clamp
voltage
I
IN
=1mA 6 6.8 8 V
I
IN
= -1 mA -1.0 -0.3 V
I
DSS
Zero input voltage drain
current (V
IN
=0V)
V
DS
=13V; V
IN
=0V; T
j
=25°C 30 µA
V
DS
=25V; V
IN
=0V 75 µA
On
R
DS(on)
Static drain-source on
resistance
V
IN
=5V; I
D
= 3.5 A; T
j
=25°C 65 mΩ
V
IN
=5V; I
D
= 3.5 A 130 mΩ
Dynamic (T
j
= 25 °C, unless otherwise specified)
g
fs
(1)
Forward
transconductance
V
DD
=13V; I
D
=3.5A 9 S
C
OSS
Output capacitance V
DS
=13V; f=1MHz; V
IN
= 0 V 220 pF