Datasheet

Electrical specifications VNN3NV04P-E, VNS3NV04P-E
8/22 Doc ID 15626 Rev. 5
t
d(on)
Turn-on delay time
V
DD
=15V; I
D
= 1.5 A; V
gen
=5V;
R
gen
=2.2KΩ (see Figure 4)
0.45 1.35 µs
t
r
Rise time 2.5 7.5 µs
t
d(off)
Turn-off delay time 3.3 10.0 µs
t
f
Fall time 2.0 6.0 µs
(dI/dt)
on
Turn-on current slope
V
DD
=15V; I
D
= 1.5 A; V
gen
=5V;
R
gen
=R
IN MIN
=220Ω
4.7 A/µs
Q
i
Total input charge
V
DD
=12V; I
D
= 1.5 A; V
IN
=5V;
I
gen
=2.13mA (seeFigure 7)
8.5 nC
Source drain diode (T
j
=25°C, unless otherwise specified)
V
SD
(1)
Forward on voltage I
SD
= 1.5 A; V
IN
=0V 0.8 V
t
rr
Reverse recovery time
I
SD
= 1.5 A; dI/dt = 12 A/µs;
V
DD
=30V; L=200µH
(see Figure 5)
107 ns
Q
rr
Reverse recovery charge 37 µC
I
RRM
Reverse recovery current 0.7 A
Protections (-40°C < T
j
< 150°C, unless otherwise specified)
I
lim
Drain current limit V
IN
=5V; V
DS
=13V 3.5 5 7 A
t
dlim
Step response current limit V
IN
=5V; V
DS
=13V 10 µs
T
jsh
Over temperature shutdown 150 175 200 °C
T
jrs
Over temperature reset 135 °C
I
gf
Fault sink current V
IN
=5V; V
DS
=13V; T
j
=T
jsh
10 15 20 mA
E
as
Single pulse avalanche
energy
starting T
j
=25°C; V
DD
=24V;
V
IN
=5V; R
gen
=R
IN MIN
= 220 Ω;
L = 24 mH (see Figure 6 and
Figure 8)
100 mJ
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 4. Electrical characteristics (continued)
Symbol Parameter Test conditions Min Typ Max Unit