Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsPMICsPMIC - ELCs Low side SOT 223

September 2013 Doc ID 15586 Rev 3 1/28

VNN1NV04P-E, VNS1NV04P-E

OMNIFET II

fully autoprotected Power MOSFET

Features

• Linear current limitation

• Thermal shutdown

• Short circuit protection

• Integrated clamp

• Low current drawn from input pin

• Diagnostic feedback through input pin

• ESD protection

• Direct access to the gate of the Power

MOSFET (analog driving)

• Compatible with standard Power MOSFET

Description

The VNN1NV04P-E, VNS1NV04P-E are

monolithic devices designed in

STMicroelectronics VIPower M0-3 Technology,

intended for replacement of standard Power

MOSFETs from DC up to 50 kHz applications.

Built in thermal shutdown, linear current limitation

and overvoltage clamp protect the chip in harsh

environments.

Fault feedback can be detected by monitoring the

voltage at the input pin.

Parameter Symbol Value

Max on-state resistance (per ch.) R

250 m

Current limitation (typ) I

LIMH

1.7 A

Drain-source clamp voltage V

CLAMP

40 V

Table 1. Device summary

Package

Order codes

Tube Tape and reel

SOT-223 VNN1NV04P-E VNN1NV04PTR-E

SO-8 VNS1NV04P-E VNS1NV04PTR-E

SOT-223

SO-8

www.st.com

Summary of content (28 pages)

PAGE 1
VNN1NV04P-E, VNS1NV04P-E OMNIFET II fully autoprotected Power MOSFET Features Parameter Symbol Value Max on-state resistance (per ch.) RON 250 m Current limitation (typ) ILIMH 1.
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Contents VNN1NV04P-E, VNS1NV04P-E Contents 1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.3 Electrical characteristics . . . .
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VNN1NV04P-E, VNS1NV04P-E List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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List of figures VNN1NV04P-E, VNS1NV04P-E List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Figure 33. Figure 34. Figure 35. Figure 36. Figure 37. Figure 38. Figure 39. Figure 40. Figure 41. Figure 42.
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VNN1NV04P-E, VNS1NV04P-E 1 Block diagram and pin description Block diagram and pin description Figure 1. Block diagram DRAIN 2 Overvoltage Clamp INPUT Gate Control 1 Linear Current Limiter Over Temperature 3 SOURCE Figure 2. Configuration diagram (top view) (a) SOURCE 1 8 DRAIN SOURCE INPUT DRAIN DRAIN SOURCE 4 5 DRAIN a. For the pins configuration related to SOT-223 see outline at page 1.
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Electrical specifications 2 VNN1NV04P-E, VNS1NV04P-E Electrical specifications Figure 3. Current and voltage conventions ID VDS DRAIN IIN RIN INPUT SOURCE VIN 2.1 Absolute maximum ratings Stress values that exceed those listed in the “Absolute maximum ratings” table can cause permanent damage to the device. These are stress ratings only, and operation of the device at these, or any other conditions greater than those, indicated in the operating sections of this specification is not implied.
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VNN1NV04P-E, VNS1NV04P-E 2.2 Electrical specifications Thermal data Table 3. Thermal data Max value Symbol Parameter Unit SOT-223 Rthj-case Thermal resistance junction-case Rthj-lead Thermal resistance junction-lead Rthj-amb SO-8 18 °C/W 15 (1) Thermal resistance junction-ambient (1) 70 65 °C/W °C/W 1. When mounted on a standard single-sided FR4 board with 50 mm2 of Cu (at least 35 m thick) connected to all DRAIN pins 2.3 Electrical characteristics Table 4.
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Electrical specifications Table 4. Electrical characteristics (continued) Symbol td(on) tr td(off) tf (dI/dt)on Qi VNN1NV04P-E, VNS1NV04P-E Parameter Test conditions Min Turn-on delay time Rise time Turn-off delay time VDD=15 V; ID=0.5 A Vgen=5 V; Rgen=2.2 K (see Figure 4) Fall time Typ Max Unit 0.25 1.0 µs 1.3 4.0 µs 1.8 5.5 µs 1.2 4.0 µs Turn-on current slope VDD=15 V; ID=1.5 A Vgen=5 V; Rgen=RIN MIN=330  5 A/µs Total input charge VDD=12 V; ID=0.5 A; VIN=5 V Igen=2.
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VNN1NV04P-E, VNS1NV04P-E Figure 4.
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Electrical specifications Figure 5. VNN1NV04P-E, VNS1NV04P-E Test circuit for diode recovery times A A D I FAST DIODE OMNIFET S L=100uH B B 330 D Rgen I VDD OMNIFET Vgen S 8.5  Figure 6.
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VNN1NV04P-E, VNS1NV04P-E Figure 7. Electrical specifications Input charge test circuit VIN GEN ND8003 Figure 8.
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Electrical specifications VNN1NV04P-E, VNS1NV04P-E 2.4 Electrical characteristics curves Figure 9. Source-drain diode forward characteristics Figure 10. Static drain-source on resistance Vsd (mV) Rds(on) (ohms) 1000 4.5 Tj=-40ºC 4 950 Vin=2.5V 3.5 Vin=0V 3 900 2.5 850 2 1.5 800 Tj=25ºC 1 750 Tj=150ºC 0.5 0 700 0 2 4 6 8 10 12 0 14 0.05 0.1 0.15 Figure 11. 0.2 0.25 0.3 Id(A) Id (A) Derating curve Figure 12.
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VNN1NV04P-E, VNS1NV04P-E Electrical specifications Figure 15. Static drain-source on resistance vs Id Figure 16. Transfer characteristics Rds(on) (mohms) Idon(A) 500 2.25 Vin=3.5V 450 Tj=25ºC 2 Vds=13.5V Tj=150ºC 400 1.75 Vin=5V 350 1.5 300 1.25 250 Vin=3.5V 1 Vin=5V Vin=3.5V 0.75 Tj=25ºC 200 150 Tj=-40ºC Tj=-40ºC 0.5 Vin=5V 100 Tj=150ºC 0.25 50 0 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 1.5 2 2 1.75 Id(A) 2.5 2.25 3 3.5 2.75 3.25 4 3.75 4.5 4.25 5 4.
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Electrical specifications VNN1NV04P-E, VNS1NV04P-E Figure 21. Turn-off drain-source voltage slope Figure 22. Capacitance variations (part 2/2) C(pF) dv/dt(V/us) 225 350 200 300 Vin=3.5V Vdd=15V Id=0.5A 250 f=1MHz Vin=0V 175 200 150 150 125 100 100 50 75 50 0 0 500 1000 1500 2000 0 2500 5 10 15 20 25 30 35 Vds(V) Rg(ohm) Figure 23. Switching time resistive load (part 1/2) Figure 24. Switching time resistive load (part 2/2) t(ns) t(us) 550 2 500 1.75 Vdd=15V Id=0.
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VNN1NV04P-E, VNS1NV04P-E Electrical specifications Figure 27. Normalized input threshold voltage Figure 28. Normalized current limit vs junction vs temperature temperature Vinth (V) Ilim (A) 2 5 1.8 4.5 Vds=Vin Id=1mA 1.6 Vin=5V Vds=13V 4 1.4 3.5 1.2 3 1 2.5 0.8 2 0.6 1.5 0.4 1 0.2 0.5 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) Tc (ºC) Figure 29. Step response current limit Tdlim(us) 2.4 2.3 Vin=5V Rg=330ohm 2.2 2.
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Protection features 3 VNN1NV04P-E, VNS1NV04P-E Protection features During normal operation, the input pin is electrically connected to the gate of the internal Power MOSFET through a low impedance path. The device then behaves like a standard Power MOSFET and can be used as a switch from DC up to 50 kHz. The only difference from the user’s standpoint is that a small DC current IISS (typ. 100 µA) flows into the input pin in order to supply the internal circuitry.
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VNN1NV04P-E, VNS1NV04P-E Package and PCB thermal data 4 Package and PCB thermal data 4.1 SOT-223 thermal data Figure 30. SOT-223 PC board . Note: Layout condition of Rth and Zth measurements (PCB FR4 area = 58 mm x 58 mm,PCB thickness = 2 mm, Cu thickness=35 µm, Copper areas: from minimum pad layout to 0.8 cm2). Figure 31.
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Package and PCB thermal data VNN1NV04P-E, VNS1NV04P-E Figure 32. SOT-223 thermal impedance junction ambient single pulse ZTH ( ° C/ W) 1000 Footprint 100 2 cm2 10 1 0,1 0,0001 0,001 0,01 0,1 1 Time ( s) 10 100 1000 Equation 1: pulse calculation formula Z TH = R TH +Z THtp 1 –  where  = tP/T Figure 33. SOT-223 thermal fitting model of a single channel Table 5. 18/28 SOT-223 thermal parameter Area/island (cm2) FP R1 (°C/W) 0.8 R2 (°C/W) 1.6 R3 (°C/W) 4.
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VNN1NV04P-E, VNS1NV04P-E Table 5. 4.2 Package and PCB thermal data SOT-223 thermal parameter (continued) Area/island (cm2) FP C1 (W·s/°C) 0.00006 C2 (W·s/°C) 0.0005 C3 (W·s/°C) 0.03 C4 (W·s/°C) 0.16 C5 (W·s/°C) 1000 C6 (W·s/°C) 0.5 2 2 SO-8 thermal data Figure 34. SO-8 PC board Note: Layout condition of Rth and Zth measurements (PCB FR4 area = 58 mm x 58 mm,PCB thickness = 2 mm, Cu thickness=35 µm, Copper areas: from minimum pad layout to 2 cm2). Figure 35.
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Package and PCB thermal data VNN1NV04P-E, VNS1NV04P-E Figure 36. SO-8 thermal impedance junction ambient single pulse ZTH (°C/ W ) 1000 Footprint 100 2 cm2 10 1 0,1 0,0001 0,001 0,01 0,1 1 10 100 1000 Time (s) Equation 2: pulse calculation formula Z TH = R TH +Z THtp 1 –  where  = tP/T Figure 37. SO-8 thermal fitting model of a single channel Table 6. 20/28 SO-8 thermal parameter Area/island (cm2) FP R1 (°C/W) 0.8 R2 (°C/W) 2.6 R3 (°C/W) 3.
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VNN1NV04P-E, VNS1NV04P-E Table 6. Package and PCB thermal data SO-8 thermal parameter (continued) Area/island (cm2) FP R5 (°C/W) 16 R6 (°C/W) 58 C1 (W·s/°C) 0.00006 C2 (W·s/°C) 0.0005 C3 (W·s/°C) 0.0075 C4 (W·s/°C) 0.045 C5 (W·s/°C) 0.35 C6 (W·s/°C) 1.
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Package and packing information 5 VNN1NV04P-E, VNS1NV04P-E Package and packing information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 5.1 SOT-223 mechanical data Figure 38.
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VNN1NV04P-E, VNS1NV04P-E 5.2 Package and packing information SO8 mechanical data Table 7. SO-8 mechanical data mm Dim. Min. Typ. A Max. 1.75 A1 0.10 A2 1.25 b 0.28 0.48 c 0.17 0.23 (1) 4.80 4.90 5.00 E 5.80 6.00 6.20 3.80 3.90 4.00 D (2) E1 e 0.25 1.27 h 0.25 0.50 L 0.40 1.27 L1 k 1.04 0° ccc 8° 0.10 1. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall not exceed 0.15 mm in total (both side). 2.
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Package and packing information VNN1NV04P-E, VNS1NV04P-E Figure 39.
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VNN1NV04P-E, VNS1NV04P-E 5.3 Package and packing information SOT-223 packing information Figure 40. SOT-223 tape and reel shipment (suffix “TR”) Reel dimensions Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 1000 1000 330 1.5 13 20.2 12.4 60 18.4 Tape dimensions According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb.
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Package and packing information 5.4 VNN1NV04P-E, VNS1NV04P-E SO8 packing information Figure 41. SO-8 tube shipment (no suffix) B Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) C A 100 2000 532 3.2 6 0.6 All dimensions are in mm. Figure 42. SO-8 tape and reel shipment (suffix “TR”) REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 12.4 60 18.4 All dimensions are in mm.
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VNN1NV04P-E, VNS1NV04P-E 6 Revision history Revision history Table 8. Document revision history Date Revision Changes 16-May-2009 1 Initial release. 29-Sep-2009 2 Removed target specification on cover page. 20-Sep-2013 3 Updated Disclaimer.
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VNN1NV04P-E, VNS1NV04P-E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.