Datasheet

Electrical characteristics VNL5160N3-E, VNL5160S5--E
10/27 DocID16364 Rev 3
3 Electrical characteristics
Values specified in this section are for V
IN
=V
supply
= 4.5 V to 5.5 V, -40 °C < T
j
<150°C,
unless otherwise stated.
Table 6. PowerMOS section
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
supply
Operating supply
voltage
3.555.5V
R
ON
On-state resistance
V
IN
=V
supply
=5V; I
D
= 1 A;
T
j
= 25 °C
160 170 mΩ
V
IN
=V
supply
=5V; I
D
= 1 A;
T
j
= 150 °C
320 mΩ
V
CLAMP
Drain-source clamp
voltage
V
IN
= 0 V; I
D
= 1 A 41 46 52 V
V
CLTH
Drain-source clamp
threshold voltage
V
IN
= 0 V; I
D
= 2 mA 36 V
I
DSS
Off-state output current
V
IN
= 0 V; V
DS
= 13 V; T
j
= 25 °C 0 3 µA
V
IN
= 0 V; V
DS
= 13 V; T
j
= 125 °C 0 5 µA
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
SD
Forward on voltage I
D
= 1 A; V
IN
= 0 V — 0.8 — V
Table 8. Input section
(1)
1. Valid for VNL5160N3-E option (input & supply pins connected together).
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
ISS
Supply current from
input pin
On-state V
IN
= V
supply
= 5 V;
V
DS
= 0 V
30 65 µA
V
ICL
Input clamp voltage
I
S
= 1 mA 5.5 7 V
I
S
= -1 mA -0.7 V
V
INTH
Input threshold voltage V
DS
= V
IN
; I
D
= 1 mA 1 3.5 V
Table 9. Status pin
(1)
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
STAT
Status low output
voltage
I
STAT
= 1 mA 0.5 V
I
LSTAT
Status leakage current
Normal operation,
V
STAT
=5V
10 µA