Datasheet
Table Of Contents
- Table 1. Device summary
- 1 Block diagram and pin description
- 2 Electrical specifications
- 2.1 Absolute maximum rating
- 2.2 Electrical characteristics
- Table 4. Power off
- Table 5. Power on
- Table 6. Dynamic
- Table 7. Gate resistance
- Table 8. Source drain diode
- Table 9. Switching on HSD
- Table 10. Switching on LSD
- Table 11. Switching off HSD
- Table 12. Switching off LSD
- Table 13. Thermal sensor
- Figure 4. Gate charge vs gate-source voltage HS
- Figure 5. Gate charge vs gate-source voltage LS
- Figure 6. Capacitance variations HS
- Figure 7. Capacitance variations LS
- Figure 8. Thermal sensor voltage vs temperature
- Figure 9. Gate charge test circuit
- Figure 10. Test circuit for inductive load switching and diode recovery times
- Figure 11. Switching times test circuit for resistive load
- 3 Package and PCB thermal data
- 3.1 PowerSSO-36 thermal data
- Figure 12. PowerSSO-36 PC board
- Figure 13. Chipset configuration
- Figure 14. Auto and mutual Rthj-amb vs PCB copper area in open box free air condition
- 3.1.1 Thermal calculation in clockwise and anti-clockwise operation in steady-state mode
- 3.1.2 Thermal resistances definition (values according to the PCB heatsink area)
- 3.1.3 Thermal calculation in transient mode
- 3.1.4 Single pulse thermal impedance definition (values according to the PCB heatsink area)
- 3.1 PowerSSO-36 thermal data
- 4 Package and packing information
- 5 Revision history
VNH7013XP-E Electrical specifications
Doc ID 022370 Rev 3 9/24
Table 7. Gate resistance
Symbol Parameter Test condition Min. Typ. Max. Unit
R
G_HS
Gate resistance HS
V
DD
=15V; f
gate
=1MHz
—20 —Ω
R
G_LS
Gate resistance LS — 13 — Ω
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
SD
(1)
1. Pulse width limited by safe operating area.
Forward on voltage
I
SD
=20A; V
GS
=0V;
T
j
=25°C
—0.91.1V
t
rr
Reverse recovery time
I
SD
= 20 A; di/dt = 100 A/µs;
V
DD
=20V; T
j
= 150 °C
(see
Figure 10
)
—50 ns
Q
rr
Reverse recovery charge — 28 nC
I
RRM
Reverse recovery current — 0.8 A
Table 9. Switching on HSD
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn on delay time
V
DD
=15V; I
D
=20A;
R
G
=4.7Ω; V
GS
=10V
— 53 — ns
t
r
Rise time — 319 — ns
Q
g
Total gate charge
V
DD
=15V; I
D
=20A;
V
GS
=10V
(see
Figure 4
and
Figure 9
)
—36—nC
Q
gs
Gate-source charge — 8.5 — nC
Q
gd
Gate-drain charge — 5 — nC
Table 10. Switching on LSD
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn on delay time
V
DD
=15V; I
D
=20A;
R
G
=4.7Ω; V
GS
=10V
— 53 — ns
t
r
Rise time — 430 — ns
Q
g
Total gate charge
V
DD
=15V; I
D
=20A;
V
GS
=10V
(see
Figure 5
and
Figure 9
)
—23—nC
Q
gs
Gate-source charge — 6 — nC
Q
gd
Gate-drain charge — 2.5 — nC
Table 11. Switching off HSD
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(off)
Turn-off delay time V
DD
=15V; I
D
=20A;
R
G
=4.7Ω; V
GS
=10V
(see
Figure 11
)
—253—ns
t
f
Fall time — 169 — ns