Datasheet

Electrical specifications VNH7013XP-E
8/24 Doc ID 022370 Rev 3
2.2 Electrical characteristics
T
j
= 25 °C, unless otherwise specified.
Table 4. Power off
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
=10mA, V
GS
= 0 V 36 — V
I
DSS
Zero gate voltage drain
current (V
GS
=0V)
V
DS
=28V;
-40 °C < T
j
<150°C
— 100 µA
V
DS
=28V; T
j
= 25 °C — 10 µA
I
GSS
Gate-source leakage current
(V
DS
=0V)
V
GS
= ±10 V — ±100 nA
Table 5. Power on
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
GS(th)
Gate threshold voltage V
DS
= V
GS
; I
D
= 1 mA 2 4 V
dV
GS(th)
/dT
Gate threshold voltage
temperature derating
V
DS
= V
GS
; I
D
= 1 mA 7.5 mV/°C
R
DS(on)
HS
Static drain-source on
resistance
V
GS
= 10 V; I
D
= 5 A; T
j
=25°C 5.7 mΩ
V
GS
= 10 V; I
D
= 5 A; T
j
= 150 °C 11.9 mΩ
R
DS(on)
LS
Static drain-source on
resistance
V
GS
= 10 V; I
D
= 5 A; T
j
= 25 °C 7.3 mΩ
V
GS
= 10 V; I
D
= 5 A; T
j
= 150 °C 15.1 mΩ
Table 6. Dynamic
Symbol Parameter Test condition Min. Typ. Max. Unit
G
fs_HS
(1)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.
Forward transconductance
V
DS
=15V; I
D
=20A;
T
j
=25°C
—20 —S
G
fs_LS
(1)
Forward transconductance — 17.5 — S
C
iss_HS
Input capacitance
V
DS
= 25 V; f = 1 MHz;
V
GS
=0V (see Figure 6 )
— 1836 — pF
C
oss_HS
Output capacitance — 426 — pF
C
rss_HS
Reverse transfer capacitance — 55 — pF
C
iss_LS
Input capacitance
V
DS
=25V; f=1MHz;
V
GS
=0V (see Figure 7 )
— 1250 — pF
C
oss_LS
Output capacitance — 311 — pF
C
rss_LS
Reverse transfer capacitance — 49 — pF