Datasheet
Table Of Contents
- Table 1. Device summary
- 1 Block diagram and pin description
- 2 Electrical specifications
- 2.1 Absolute maximum rating
- 2.2 Electrical characteristics
- Table 4. Power off
- Table 5. Power on
- Table 6. Dynamic
- Table 7. Gate resistance
- Table 8. Source drain diode
- Table 9. Switching on HSD
- Table 10. Switching on LSD
- Table 11. Switching off HSD
- Table 12. Switching off LSD
- Table 13. Thermal sensor
- Figure 4. Gate charge vs gate-source voltage HS
- Figure 5. Gate charge vs gate-source voltage LS
- Figure 6. Capacitance variations HS
- Figure 7. Capacitance variations LS
- Figure 8. Thermal sensor voltage vs temperature
- Figure 9. Gate charge test circuit
- Figure 10. Test circuit for inductive load switching and diode recovery times
- Figure 11. Switching times test circuit for resistive load
- 3 Package and PCB thermal data
- 3.1 PowerSSO-36 thermal data
- Figure 12. PowerSSO-36 PC board
- Figure 13. Chipset configuration
- Figure 14. Auto and mutual Rthj-amb vs PCB copper area in open box free air condition
- 3.1.1 Thermal calculation in clockwise and anti-clockwise operation in steady-state mode
- 3.1.2 Thermal resistances definition (values according to the PCB heatsink area)
- 3.1.3 Thermal calculation in transient mode
- 3.1.4 Single pulse thermal impedance definition (values according to the PCB heatsink area)
- 3.1 PowerSSO-36 thermal data
- 4 Package and packing information
- 5 Revision history

Electrical specifications VNH7013XP-E
10/24 Doc ID 022370 Rev 3
Figure 4. Gate charge vs gate-source voltage HS
Table 12. Switching off LSD
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(off)
Turn-off delay time V
DD
=15V; I
D
=20A;
R
G
=4.7Ω; V
GS
=10V
(see
Figure 11
)
—124—ns
t
f
Fall time — 293 — ns
Table 13. Thermal sensor
(1)
1. See
Figure 8
.
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
F
Chain diode forward
voltage
T
j
= 25 °C; I
F
= 250 µA
(see
Figure 8
)
3.72 3.88 4.04 V
S
F
Chain temperature
coefficient
-40 °C < T
j
<175°C; I
F
= 250 µA -8.1 mV/°K
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