Datasheet

September 2013 Doc ID 7383 Rev 4 1/37
1
VNN7NV04, VNS7NV04
VND7NV04, VND7NV04-1
OMNIFET II
fully autoprotected Power MOSFET
Features
Linear current limitation
Thermal shutdown
Short circuit protection
Integrated clamp
Low current drawn from input pin
Diagnostic feedback through input pin
ESD protection
Direct access to the gate of the Power
MOSFET (analog driving)
Compatible with standard Power MOSFET in
compliance with the 2002/95/EC European
Directive
Description
The VNN7NV04, VNS7NV04, VND7NV04
VND7NV04-1, are monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
intended for replacement of standard Power
MOSFETs from DC up to 50 kHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Type R
DS(on)
I
lim
V
clamp
VNN7NV04
VNS7NV04
VND7NV04
VND7NV04-1
60 mΩ 6A 40V
SOT-223
SO-8
TO251 (IPAK)
1
2
2
3
1
3
3
2
1
TO252 (DPAK)
Table 1. Device summary
Package
Order codes
Tube Tube (lead-free) Tape and reel Tape and reel (lead-free)
SOT-223 VNN7NV04 - VNN7NV0413TR -
SO-8 VNS7NV04 - VNS7NV0413TR -
TO-252 VND7NV04 VND7NV04-E VND7NV0413TR VND7NV04TR-E
TO-251 VND7NV04-1 VND7NV04-1-E - -
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