Datasheet

VND5T050AK-E Electrical specifications
Doc ID 022694 Rev. 3 9/32
2.3 Electrical characteristics
8V<V
CC
<36V; -40°C<T
j
< 150°C, unless otherwise specified.
Table 5. Power section
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CC
Operating supply voltage 8 24 36 V
V
USD
Undervoltage shutdown 3.5 5 V
V
USDhyst
Undervoltage shutdown
hysteresis
0.5 V
R
ON
On-state resistance
(1)
1. For each channel
I
OUT
= 2 A; T
j
= 25°C 50
mΩ
I
OUT
= 2 A; T
j
= 150°C 100
V
clamp
Clamp voltage I
S
=20mA 586470 V
I
S
Supply current
Off-state; V
CC
=24V; T
j
=25°C;
V
IN
=V
OUT
=V
SENSE
=0V
2
(2)
2. PowerMOS leakage included
5
(2)
µA
On-state; V
CC
=24V; V
IN
=5V;
I
OUT
=0A
4.2 6 mA
I
L(off)
Off-state output current
V
IN
=V
OUT
=0V; V
CC
=24V;
T
j
=25°C
00.013
µA
V
IN
=V
OUT
=0V; V
CC
=24V;
T
j
=125°C
05
V
F
Output - V
CC
diode
voltage
-I
OUT
= 2 A; T
j
=150°C 0.7 V
Table 6. Switching (V
CC
=24V; T
j
=25°C)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time R
L
= 12 Ω 30 µs
t
d(off)
Turn-off delay time R
L
= 12 Ω 40 µs
dV
OUT
/dt
(on)
Turn-on voltage slope R
L
= 12 Ω 0.7 V/us V/µs
dV
OUT
/dt
(off)
Turn-off voltage slope R
L
= 12 Ω 0.8 V/us V/µs
W
ON
Switching energy losses
during t
won
R
L
= 12 Ω 0.5 mJ
W
OFF
Switching energy losses
during t
woff
R
L
= 12 Ω 0.3 mJ