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September 2013 Rev 6 1/31

VND5160J-E

Double channel high side driver for automotive applications

Features

■ General

– Inrush current active management by

power limitation

– Very low stand-by current

– 3.0V CMOS compatible input

– Optimized electromagnetic emission

– Very low electromagnetic susceptibility

– In compliance with the 2002/95/EC

European directive

■ Diagnostic functions

– Open drain status output

– On state open load detection

– Off state open load detection

– Thermal shutdown indication

■ Protection

– Undervoltage shut-down

– Overvoltage clamp

– Output stuck to Vcc detection

– Load current limitation

– Self limiting of fast thermal transients

– Protection against loss of ground and loss

of V

– Thermal shut down

– Reverse battery protection (see Figure 28)

– Electrostatic discharge protection

Application

■ All types of resistive, inductive and capacitive

loads

Description

The VND5160J-E is a monolithic device made

using STMicroelectronics VIPower M0-5

technology. It is intended for driving resistive or

inductive loads with one side connected to

ground. Active V

pin voltage clamp protects the

device against low energy spikes (see ISO7637

transient compatibility table).

The device detects open load condition in both

ON and OFF states, when STAT_DIS is left open

or driven low. Output shorted to V

is detected in

the OFF state.

When STAT_DIS is driven high, the STATUS pin is

in a high impedance condition.

Output current limitation protects the device in

overload condition. In case of long duration

overload, the device limits the dissipated power to

safe level up to thermal shut-down intervention.

Thermal shut-down with automatic restart allows

the device to recover normal operation as soon as

fault condition disappears.

Max supply voltage V

41V

Operating voltage range V

4.5 to 36V

Max on-state resistance

160 m

Current limitation (typ) I

LIMH

Off state supply current (typ) I

2 µA

(1)

1. Typical value with all loads connected.

PowerSSO-12

Table 1. Device summary

Package

Order codes

Part number (Tube) Part number (Tape & Reel)

PowerSSO-12 VND5160J-E VND5160JTR-E

www.st.com

Summary of content (31 pages)

PAGE 1
VND5160J-E Double channel high side driver for automotive applications Features Max supply voltage VCC 41V Operating voltage range VCC 4.5 to 36V Max on-state resistance RON 160 m Current limitation (typ) ILIMH 5A Off state supply current (typ) IS PowerSSO-12 – Electrostatic discharge protection (1) 2 µA 1. Typical value with all loads connected. Application ■ ■ ■ ■ General – Inrush current active management by power limitation – Very low stand-by current – 3.
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Contents VND5160J-E Contents 1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.3 Electrical characteristics . . . . . . . . .
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VND5160J-E List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pin functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Suggested connections for unused and N.C.
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List of figures VND5160J-E List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Figure 33. Figure 34. Figure 35. Figure 36. Figure 37. 4/31 Block diagram . . . . . . . . . . . . . . . . . . . . . . . .
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VND5160J-E 1 Block diagram and pin description Block diagram and pin description Figure 1. Block diagram VCC OUTPUT1 VCC CLAMP GND UNDERVOLTAGE INPUT1 CLAMP 1 STATUS1 DRIVER 1 STAT_DIS LOGIC INPUT2 CLAMP 2 DRIVER 2 ILIM 1 PWRLIM1 ILIM 2 VDSLIM 1 VDSLIM 2 STATUS2 OPENLOAD ON 1 OPENLOAD ON 2 OPENLOAD OFF 1 OPENLOAD OFF 2 OVERTEMP. 1 OVERTEMP. 2 OUTPUT2 PWRLIM 2 Table 2. Pin functions Name VCC OUTPUTn GND INPUTn Function Battery connection. Power output. Ground connection.
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Block diagram and pin description Figure 2. VND5160J-E Configuration diagram (top view) TAB = Vcc GND STAT_DIS INPUT 1 STATUS 1 STATUS 2 INPUT 2 Table 3. 12 11 10 9 8 7 Vcc OUTPUT 1 OUTPUT 1 OUTPUT 2 OUTPUT 2 Vcc Suggested connections for unused and N.C. pins Connection / Pin STATUS N.C. OUTPUT INPUT STAT_DIS Floating X X X X X To ground N.R.(1) X N.R. Through 10k resistor Through 10k resistor 1. Not recommended.
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VND5160J-E 2 Electrical specifications Electrical specifications Figure 3. Current and voltage conventions IS VCC IOUTn ISD STAT_DIS VSD VFn VCC IINn OUTPUTn STATUSn INPUTn VINn ISTATn VOUTn VSTATn GND IGND Note: VFn = VOUTn - VCCn during reverse battery condition. 2.1 Absolute maximum ratings Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may cause permanent damage to the device.
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Electrical specifications Table 4. Absolute maximum ratings (continued) Symbol Value Unit VESD Electrostatic discharge (Human Body Model: R=1.5K C=100pF) – INPUT – STATUS – STAT_DIS – OUTPUT – VCC 4000 4000 4000 5000 5000 V V V V V VESD Charge device model (CDM-AEC-Q100-011) 750 V Junction operating temperature -40 to 150 °C Storage temperature -55 to 150 °C Tj Tstg 2.2 VND5160J-E Parameter Thermal data Table 5.
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VND5160J-E 2.3 Electrical specifications Electrical characteristics Values specified in this section are for 8V
PAGE 10
Electrical specifications Table 8. Symbol VND5160J-E Status pin (VSD=0) Parameter Test conditions Min. Typ. Max. Unit VSTAT Status low output voltage ISTAT= 1.6 mA, VSD=0V 0.5 V ILSTAT Status leakage current Normal operation or VSD=5V, VSTAT= 5V 10 µA CSTAT Status pin input capacitance Normal operation or VSD=5V, VSTAT= 5V 100 pF VSCL Status clamp voltage ISTAT= 1mA ISTAT= - 1mA 7 V V Table 9.
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VND5160J-E Electrical specifications Table 10. Openload detection Symbol Parameter Test conditions Min. Typ. Max.
PAGE 12
Electrical specifications Figure 4. VND5160J-E Status timings OPEN LOAD STATUS TIMING (without external pull-up) IOUT < IOL VIN OPEN LOAD STATUS TIMING (with external pull-up) IOUT < IOL VIN VOUT < VOL VOUT > VOL VSTAT VSTAT tDOL(on) tDOL(on) tPOL OUTPUT STUCK TO Vcc OVER TEMP STATUS TIMING Tj > TTSD IOUT > IOL VIN VOUT > VOL VIN VSTAT VSTAT tDOL(on) Figure 5.
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VND5160J-E Electrical specifications Table 12. Truth table Conditions INPUTn OUTPUTn STATUSn (VSD=0V)(1) Normal operation L H L H H H Current limitation L H L X H H Overtemperature L H L L H L Undervoltage L H L L X X Output Voltage > VOL L H H H L(2) H Output Current < IOL L H L H H(3) L 1. If the VSD is high, the STATUS pin is in a high impedance. 2. The STATUS pin is low with a delay equal to tDSTKON after INPUT falling edge. 3.
PAGE 14
Electrical specifications Table 13. ISO 7637-2: 2004(E) VND5160J-E Electrical transient requirements Test levels(1) test pulse III IV Number of pulses or test times 1 -75V -100V 5000 pulses 0.5 s 5s 2 ms, 10  2a +37V +50V 5000 pulses 0.2 s 5s 50 µs, 2  3a -100V -150V 1h 90 ms 100 ms 0.1 µs, 50  3b +75V +100V 1h 90 ms 100 ms 0.1 µs, 50  4 -6V -7V 1 pulse 100 ms, 0.
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VND5160J-E Electrical specifications Figure 7.
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Electrical specifications VND5160J-E 2.4 Electrical characteristics curves Figure 8. Off state output current Figure 9. Iloff1 (uA) Input clamp voltage Vicl (V) 8 0.25 7.75 Off state Vcc=13V Vin=Vout=0V 0.2 Iin=1mA 7.5 7.25 0.15 7 6.75 0.1 6.5 0.05 6.25 0 6 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 Tc (°C) 50 75 100 125 150 175 100 125 150 175 150 175 Tc (°C) Figure 10. High level input current Figure 11. Input high level Iih (uA) Vih (V) 5 4 4.
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VND5160J-E Electrical specifications Figure 14. Status low output voltage Figure 15. Status leakage current Ilstat (uA) Vstat (V) 0.08 0.9 0.8 0.072 Istat=1.6mA Vstat=5V 0.7 0.064 0.6 0.056 0.5 0.4 0.048 0.3 0.04 0.2 0.032 0.1 0 -50 -25 0 25 50 75 100 125 150 -50 175 -25 0 25 50 75 100 125 150 175 Tc (°C) Tc (°C) Figure 16. Status clamp voltage Figure 17. On state resistance vs Tcase Ron (mOhm) Vscl (V) 300 9 270 8.5 Istat=1mA 8 Iout=1A Vcc=13V 240 7.
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Electrical specifications VND5160J-E Figure 20. Openload Off state voltage detection threshold Figure 21. Turn - On voltage slope Vol (V) dVout/dt(on) (V/ms) 5 1000 4.5 900 Vin=0V 4 Vcc=13V Ri=6.5Ohm 800 3.5 700 3 600 2.5 500 2 400 1.5 300 1 200 0.
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VND5160J-E Electrical specifications Figure 26. High level STAT_DIS voltage Figure 27.
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Application information 3 VND5160J-E Application information Figure 28. Application schematic +5V +5V VCC Rprot STAT_DIS Dld Rprot INPUT Rprot STATUS µC OUTPUT GND VGND RGND DGND Note: Channels 2, has the same internal circuit as channel 1. 3.1 GND protection network against reverse battery 3.1.1 Solution 1 : resistor in the ground line (RGND only) This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1. RGND  600mV / (IS(on)max).
PAGE 21
VND5160J-E Application information If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then ST suggests to utilize Solution 2 (see below). 3.1.2 Solution 2: a diode (DGND) in the ground line A resistor (RGND=1kshould be inserted in parallel to DGND if the device drives an inductive load. This small signal diode can be safely shared amongst several different HSDs.
PAGE 22
Application information VND5160J-E Because Is(OFF) may significantly increase if Vout is pulled high (up to several mA), the pullup resistor RPU should be connected to a supply that is switched OFF when the module is in standby. The values of VOLmin, VOLmax and IL(off2) are available in the Electrical characteristics section. Figure 29. Open load detection in Off state V batt.
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VND5160J-E 3.5 Application information Maximum demagnetization energy (VCC = 13.5V) Figure 30.
PAGE 24
Package and PCB thermal data VND5160J-E 4 Package and PCB thermal data 4.1 PowerSSO-12™ thermal data Figure 31. PowerSSO-12™ PC board Note: Layout condition of Rth and Zth measurements (PCB: Double layer, Thermal Vias, FR4 area= 77mm x 86mm,PCB thickness=1.6mm, Cu thickness=70µm (front and back side), Copper areas: from minimum pad lay-out to 8cm2). Figure 32. Rthj-amb vs.
PAGE 25
VND5160J-E Package and PCB thermal data Figure 33. PowerSSO-12™ Thermal impedance junction ambient single pulse (one channel ON) ZTH ( °C/ W) 100 Footprint 2 cm2 8 cm2 10 1 0,1 0,0001 0,001 0,01 0,1 1 Time ( s) 10 100 1000 Pulse calculation formula Z TH = R TH +Z THtp 1 –  where  = tP/T Figure 34. Thermal fitting model of a double channel HSD in PowerSSO-12™(a) a.
PAGE 26
Package and PCB thermal data Table 14. 26/31 VND5160J-E Thermal parameters Area/island (cm2) Footprint R1=R7 (°C/W) 1.2 R2=R8 (°C/W) 6 R3 (°C/W) 7 R4 (°C/W) 2 8 10 10 9 R5 (°C/W) 22 15 10 R6 (°C/W) 26 20 15 C1=C7 (W.s/°C) 0.0008 C2=C8 (W.s/°C) 0.0016 C3 (W.s/°C) 0.05 C4 (W.s/°C) 0.2 0.1 0.1 C5 (W.s/°C) 0.27 0.8 1 C6 (W.
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VND5160J-E Package and packing information 5 Package and packing information 5.1 ECOPACK® packages In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second-level interconnect. The category of Second-Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
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Package and packing information VND5160J-E PowerSSO-12™ mechanical data Table 15. Millimeters Symbol Min. Max. A 1.250 1.620 A1 0.000 0.100 A2 1.100 1.650 B 0.230 0.410 C 0.190 0.250 D 4.800 5.000 E 3.800 4.000 e 0.800 H 5.800 6.200 h 0.250 0.500 L 0.400 1.270 k 0° 8° X 1.900 2.500 Y 3.600 4.200 ddd 28/31 Typ. 0.
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VND5160J-E 5.3 Package and packing information Packing information Figure 36. PowerSSO-12™ tube shipment (no suffix) B Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) C A 100 2000 532 1.85 6.75 0.6 All dimensions are in mm. Figure 37. PowerSSO-12™ tape and reel shipment (suffix “TR”) REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 12.4 60 18.
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Revision history 6 VND5160J-E Revision history Table 16. Document revision history Date Revision 7-Jan-2004 1 Initial release. 3-Feb-2006 2 Major series of updates incorporated. 3 Reformatted. Added list of tables and list of figures. Added Section 3.5: Maximum demagnetization energy (VCC = 13.5V). Added new disclaimer. 4 Updated Table 4: Absolute maximum ratings: EMAX entries. Updated Table 13: Electrical transient requirements :Test level values III and IV for test pulse 5b and notes.
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VND5160J-E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.