Datasheet

Electrical specifications VND5050J-E / VND5050K-E
8/37 Doc ID 12266 Rev 7
2.2 Thermal data
2.3 Electrical characteristics
8V<V
CC
<36V; -40°C<T
j
<150 °C, unless otherwise specified.
.
V
ESD
Electrostatic discharge (Human Body Model: R=1.5K Ω;
C=100pF)
– Input
–Status
–STAT_DIS
–Output
–V
CC
4000
4000
4000
5000
5000
V
V
V
V
V
V
ESD
Charge device model (CDM-AEC-Q100-011) 750 V
T
j
Junction operating temperature -40 to 150 °C
T
stg
Storage temperature - 55 to 150 °C
Table 4. Absolute maximum ratings (continued)
Symbol Parameter Value Unit
Table 5. Thermal data
Symbol Parameter
Value
Unit
PowerSSO-12 PowerSSO-24
R
thj-case
Thermal resistance junction case (max)
(with one channel on)
2.8 2.8 °C/W
R
thj-amb
Thermal resistance junction ambient
(max)
See
Figure 32 See Figure 36 °C/W
Table 6. Power section
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CC
Operating supply voltage 4.5 13 36 V
V
USD
Undervoltage shutdown 3.5 4.5 V
V
USDhyst
Undervoltage shutdown
hysteresis
0.5 V
R
ON
On-state resistance
(2)
I
OUT
=2A; T
j
=25°C
I
OUT
=2A; T
j
=150°C
I
OUT
=2A; V
CC
=5V; T
j
=25°C
50
100
65
m Ω
m Ω
m Ω
V
clamp
Clamp voltage I
S
=20mA 41 46 52 V
I
S
Supply current
Off-state; V
CC
=13V; T
j
=25°C;
V
IN
=V
OUT
=V
SENSE
=V
CSD
=0V
On-state; V
CC
=13V; V
IN
=5V;
I
OUT
=0A
2
(1)
3
5
(1)
6
µA
mA