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September 2013 Doc ID 12266 Rev 7 1/37

VND5050J-E

VND5050K-E

Double channel high side driver

for automotive applications

Features

■

Main

– Inrush current active management by

power limitation

– Very low standby current

– 3.0 V CMOS compatible input

– Optimized electromagnetic emission

– Very low electromagnetic susceptibility

– In compliance with the 2002/95/EC

European directive

■

Diagnostic functions

– Open drain status output

– On-state open load detection

– Off-state open load detection

– Thermal shutdown indication

■

Protections

– Undervoltage shutdown

– Overvoltage clamp

– Output stuck to V

detection

– Load current limitation

– Self limiting of fast thermal transients

– Protection against loss of ground and loss

of V

– Thermal shutdown

– Reverse battery protection (see Figure 28)

– Electrostatic discharge protection

Applications

■

All types of resistive, inductive and capacitive

loads

Description

The VND5050K-E and VND5050J-E are

monolithic devices made using

STMicroelectronics VIPower M0-5 technology.

they are intended for driving resistive or inductive

loads with one side connected to ground. Active

pin voltage clamp protects the devices

against low energy spikes (see ISO7637 transient

compatibility table). The devices detect open load

condition both in on and off-state, when

STAT_DIS is left open or driven low. Output

shorted to V

is detected in the off-state.

When STAT_DIS is driven high, STATUS pin is in

high impedance state.

Output current limitation protects the devices in

overload condition. In case of long overload

duration, the devices limit the dissipated power to

a safe level up to thermal shutdown intervention.

Thermal shutdown with automatic restart allows

the devices to recover normal operation as soon

as fault conditions disappear.

Max supply voltage V

41 V

Operating voltage range V

4.5 to 36 V

Max on-State resistance (per ch.) R

50 m

Current limitation (typ) I

LIMH

18 A

Off-state supply current I

2µA

(1)

1. Typical value with all loads connected.

PowerSSO-24PowerSSO-12

Table 1. Device summary

Package

Order code

Tube Tape and reel

PowerSSO-12 VND5050J-E VND5050JTR-E

PowerSSO-24 VND5050K-E VND5050KTR-E

www.st.com

Summary of content (37 pages)

PAGE 1
VND5050J-E VND5050K-E Double channel high side driver for automotive applications Features Max supply voltage VCC 41 V Operating voltage range VCC 4.5 to 36 V Max on-State resistance (per ch.) RON 50 mΩ Current limitation (typ) ILIMH 18 A Off-state supply current IS 2 µA(1) PowerSSO-12 PowerSSO-24 – Reverse battery protection (see Figure 28) – Electrostatic discharge protection 1. Typical value with all loads connected.
PAGE 2
Contents VND5050J-E / VND5050K-E Contents 1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.3 Electrical characteristics . . .
PAGE 3
VND5050J-E / VND5050K-E List of tables List of tables Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Table 19. Table 20. Pin function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 6 Absolute maximum ratings . .
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List of figures VND5050J-E / VND5050K-E List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Figure 33. Figure 34. Figure 35. Figure 36. Figure 37. Figure 38. Figure 39. Figure 40. Figure 41. Figure 42.
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VND5050J-E / VND5050K-E 1 Block diagram and pin description Block diagram and pin description Figure 1. Block diagram VCC VCC CLAMP GND UNDERVOLTAGE INPUT1 CLAMP 1 STATUS1 DRIVER 1 STAT_DIS OUTPUT1 LOGIC INPUT2 OVERTEMP. 1 CURRENT LIMITER 1 STATUS2 OPENLOAD ON 1 OPENLOAD OFF 1 PWRLIM 1 Table 2. OUTPUTn GND INPUTn CONTROL & PROTECTION STATUS2 EQUIVALENT TO CHANNEL1 VCC OUTPUT2 Pin function Name VCC INPUT2 Function Battery connection. Power output. Ground connection.
PAGE 6
Block diagram and pin description Figure 2. VND5050J-E / VND5050K-E Configuration diagram (top view) TAB = Vcc GND STAT_DIS INPUT 1 STATUS 1 STATUS 2 INPUT 2 1 2 3 4 5 6 12 11 10 9 8 7 Vcc OUTPUT 1 OUTPUT 1 OUTPUT 2 OUTPUT 2 Vcc VCC GND. N.C. STAT_DIS INPUT1 STATUS1 N.C. STATUS2 N.C. INPUT2 N.C. VCC OUTPUT1 OUTPUT1 OUTPUT1 OUTPUT1 OUTPUT1 OUTPUT1 OUTPUT2 OUTPUT2 OUTPUT2 OUTPUT2 OUTPUT2 OUTPUT2 TAB = VCC PowerSSO-12 Table 3.
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VND5050J-E / VND5050K-E 2 Electrical specifications Electrical specifications Figure 3. Current and voltage conventions IS VCC VCC VFn ISD IOUTn STAT_DIS OUTPUTn VSD VOUTn IINn ISTATn INPUTn STATUSn VINn VSTATn GND IGND Note: VFn = VOUTn - VCCn during reverse battery condition. 2.1 Absolute maximum ratings Stressing the device above the rating listed in the “Absolute maximum ratings” table may cause permanent damage to the device.
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Electrical specifications Table 4. VND5050J-E / VND5050K-E Absolute maximum ratings (continued) Symbol Value Unit 4000 4000 4000 5000 5000 V V V V V 750 V Junction operating temperature -40 to 150 °C Storage temperature - 55 to 150 °C VESD Electrostatic discharge (Human Body Model: R=1.5KΩ; C=100pF) – Input – Status – STAT_DIS – Output – VCC VESD Charge device model (CDM-AEC-Q100-011) Tj Tstg 2.2 Parameter Thermal data Table 5. Thermal data Value Symbol 2.
PAGE 9
VND5050J-E / VND5050K-E Table 6. Electrical specifications Power section (continued) Symbol Parameter Test conditions IL(off2) VF Typ. Max. 0 0 0.01 3 5 VIN=VOUT=0V; VCC=13V; Tj=25°C VIN=VOUT=0V; VCC=13V; Tj=125°C Off-state output current(2) IL(off1) Min. Off-state output current(2) VIN=0V; VOUT=4V Output - VCC diode voltage (2) -IOUT=4A; Tj=150°C -75 Unit µA 0 0.7 V Max. Unit 1. PowerMOS leakage included. 2. For each channel. Table 7.
PAGE 10
Electrical specifications Table 9. Symbol VND5050J-E / VND5050K-E Protections(1) Parameter Test conditions IlimH DC short circuit current VCC=13V 5V
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VND5050J-E / VND5050K-E Table 11. Electrical specifications Logic input Symbol Parameter Test conditions VIL Input low level IIL Low level input current VIH Input high level IIH High level input current VI(hyst) Input hysteresis voltage Input clamp voltage VSDL STAT_DIS low level voltage ISDL Low level STAT_DIS current VSDH STAT_DIS high level voltage ISDH High level STAT_DIS current VSD(hyst) STAT_DIS hysteresis voltage Figure 4. VIN =0.9 V Typ. Max. Unit 0.9 V 1 µA 2.
PAGE 12
Electrical specifications Table 12. VND5050J-E / VND5050K-E Truth table Input Output Sense (VCSD=0V)(1) Normal operation L H L H H H Current limitation L H L X H H Over temperature L H L L H L Undervoltage L H L L X X Output voltage > VOL L H H H L(2) H Output current < IOL L H L H H (3) L Conditions 1. If the VCSD is high, the SENSE output is at a high impedance, its potential depends on leakage currents and external circuit. 2.
PAGE 13
VND5050J-E / VND5050K-E Figure 6. Electrical specifications Output voltage drop limitation Vcc-Vout Tj=150oC Tj=25oC Tj=-40oC Von Iout Von/Ron(T) Table 13. ISO 7637-2: 2004(E) Electrical transient requirements (part 1/3) Test levels(1) test pulse III IV Number of pulses or test times 1 -75V -100V 5000 pulses 0.5 s 5s 2 ms, 10 Ω 2a +37V +50V 5000 pulses 0.2 s 5s 50 μs, 2 Ω 3a -100V -150V 1h 90 ms 100 ms 0.1 μs, 50 Ω 3b +75V +100V 1h 90 ms 100 ms 0.
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Electrical specifications Table 15. 14/37 VND5050J-E / VND5050K-E Electrical transient requirements (part 3/3) Class Contents C All functions of the device are performed as designed after exposure to disturbance.
PAGE 15
VND5050J-E / VND5050K-E Figure 7.
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Electrical specifications VND5050J-E / VND5050K-E 2.4 Electrical characteristics curves Figure 8. Off-state output current Figure 9. Iloff1 (uA) High level input current lih (uA) 1 5 4.5 0.875 Vin=2.1V Off state Vcc=13V Vin=Vout=0V 0.75 4 3.5 0.625 3 0.5 2.5 2 0.375 1.5 0.25 1 0.125 0.5 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 Tc (°C) 50 75 100 125 150 175 100 125 150 175 150 175 Tc (°C) Figure 10. Input clamp voltage Figure 11.
PAGE 17
VND5050J-E / VND5050K-E Electrical specifications Figure 14. Status low output voltage Figure 15. On-state resistance vs Tcase Vstat (V) Ron (mOhm) 0.9 100 90 0.8 Istat=1.6mA Iout=2A Vcc=13V 80 0.7 70 0.6 60 0.5 50 0.4 40 0.3 30 0.2 20 0.1 10 0 0 -50 -25 0 25 50 75 100 125 150 -50 175 -25 0 25 50 75 100 125 150 175 Tc (°C) Tc (°C) Figure 16. Status leakage current Figure 17. On-state resistance vs VCC Ilstat (uA) Ron (mOhm) 0.055 100 90 0.
PAGE 18
Electrical specifications VND5050J-E / VND5050K-E Figure 20. Openload off-state voltage detection threshold Figure 21. ILIM vs Tcase Ilimh (A) Vol (V) 25 5 22.5 4.5 Vcc=13V Vin=0V 4 20 3.5 17.5 3 15 2.5 12.5 2 10 1.5 7.5 5 1 -50 -25 0 25 50 75 100 125 150 -50 175 -25 0 25 50 75 100 125 150 175 Tc (°C) Tc (°C) Figure 22. Turn-on voltage slope Figure 23. Undervoltage shutdown dVout/dt(on) (V/ms) Vusd (V) 1000 14 900 Vcc=13V RI=6.
PAGE 19
VND5050J-E / VND5050K-E Electrical specifications Figure 26. High level STAT_DIS voltage Figure 27.
PAGE 20
Application information 3 VND5050J-E / VND5050K-E Application information Figure 28. Application schematic +5V +5V VCC Rprot STAT_DIS Dld Rprot INPUT μC OUTPUT Rprot STATUS GND VGND RGND DGND Note: Channel 2 has the same internal circuit as channel 1. 3.1 GND protection network against reverse battery 3.1.1 Solution 1: resistor in the ground line (RGND only) This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1.
PAGE 21
VND5050J-E / VND5050K-E Application information If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then ST suggests to utilize Solution 2 (see below). 3.1.2 Solution 2: a diode (DGND) in the ground line A resistor (RGND=1kΩ) should be inserted in parallel to DGND if the device drives an inductive load. This small signal diode can be safely shared amongst several different HSDs.
PAGE 22
Application information VND5050J-E / VND5050K-E Because Is(OFF) may significantly increase if Vout is pulled high (up to several mA), the pullup resistor RPU should be connected to a supply that is switched OFF when the module is in standby. The values of VOLmin, VOLmax and IL(off2) are available in the Electrical Characteristics section. Figure 29. Open-load detection in off-state V batt.
PAGE 23
VND5050J-E / VND5050K-E 3.5 Application information Maximum demagnetization energy (VCC = 13.5V) Figure 30. Maximum turn-off current versus inductance (for each channel) 100 A B C I (A) 10 1 0,1 1 10 100 L (mH) A: Tjstart = 150°C single pulse B: Tjstart = 100°C repetitive pulse C: Tjstart = 125°C repetitive pulse VIN, IL Demagnetization Demagnetization Demagnetization t Note: Values are generated with RL =0 Ω.
PAGE 24
Package and PCB thermal data VND5050J-E / VND5050K-E 4 Package and PCB thermal data 4.1 PowerSSO-12™ thermal data Figure 31. PowerSSO-12™ PC board Note: Layout condition of Rth and Zth measurements (PCB: Double layer, Thermal Vias, FR4 area= 77mm x 86mm,PCB thickness=1.6mm, Cu thickness=70μm (front and back side), Copper areas: from minimum pad lay-out to 8cm2). Figure 32.
PAGE 25
VND5050J-E / VND5050K-E Package and PCB thermal data Figure 33. PowerSSO-12™ thermal impedance junction ambient single pulse (one channel on) ZTH ( ° C/ W) 100 Footprint 2 cm2 8 cm2 10 1 0,1 0,0001 0,001 0,01 0,1 1 Time ( s) 10 100 1000 Equation 1: pulse calculation formula Z THδ = R TH ⋅δ+Z THtp (1 – δ) where δ = tP/T Figure 34. Thermal fitting model of a double channel HSD in PowerSSO-12™(a) a.
PAGE 26
Package and PCB thermal data Table 16. 26/37 VND5050J-E / VND5050K-E PowerSSO-12™ thermal parameters Area/island (cm2) Footprint R1= R7 (°C/W) 0.7 R2= R8 (°C/W) 2.8 R3 (°C/W) 4 R4 (°C/W) 2 8 8 8 7 R5 (°C/W) 22 15 10 R6 (°C/W) 26 20 15 C1= C7 (W.s/°C) 0.001 C2= C8 (W.s/°C) 0.0025 C3 (W.s/°C) 0.05 C4 (W.s/°C) 0.2 0.1 0.1 C5 (W.s/°C) 0.27 0.8 1 C6 (W.
PAGE 27
VND5050J-E / VND5050K-E 4.2 Package and PCB thermal data PowerSSO-24™ thermal data Figure 35. PowerSSO-24™ PC board Note: Layout condition of Rth and Zth measurements (PCB: Double layer, Thermal Vias, FR4 area= 77mm x 86mm, PCB thickness=1.6mm, Cu thickness=70µm (front and back side), Copper areas: from minimum pad lay-out to 8cm2). Figure 36.
PAGE 28
Package and PCB thermal data VND5050J-E / VND5050K-E Figure 37. PowerSSO-24™ thermal impedance junction ambient single pulse (one channel on) Equation 2: pulse calculation formula Z THδ = R TH ⋅δ+Z THtp (1 – δ) where δ = tP/T Figure 38. Thermal fitting model of a double channel HSD in PowerSSO-24™(b) b. The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
PAGE 29
VND5050J-E / VND5050K-E Table 17. Package and PCB thermal data PowerSSO-24™ thermal parameters Area/island (cm2) Footprint R1=R7 (°C/W) 0.4 R2=R8 (°C/W) 2 R3 (°C/W) 6 R4 (°C/W) 7.7 R5 (°C/W) 2 8 9 9 8 R6 (°C/W) 28 17 10 C1=C7 (W.s/°C) 0.001 C2=C8 (W.s/°C) 0.0022 C3 (W.s/°C) 0.025 C4 (W.s/°C) 0.75 C5 (W.s/°C) 1 4 9 C6 (W.s/°C) 2.
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Package and packing information VND5050J-E / VND5050K-E 5 Package and packing information 5.1 ECOPACK® packages In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 5.2 PowerSSO-12™ package information Figure 39.
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VND5050J-E / VND5050K-E Table 18. Package and packing information PowerSSO-12™ mechanical data Millimeters Symbol Min. Typ. Max. A 1.25 1.62 A1 0 0.1 A2 1.10 1.65 B 0.23 0.41 C 0.19 0.25 D 4.8 5.0 E 3.8 4.0 e 0.8 H 5.8 6.2 h 0.25 0.5 L 0.4 1.27 k 0° 8° X 1.9 2.5 Y 3.6 4.2 ddd 0.
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Package and packing information 5.3 VND5050J-E / VND5050K-E PowerSSO-24™ package information Figure 40. PowerSSO-24™ package dimensions Table 19. PowerSSO-24™ mechanical data Millimeters Symbol Min. Typ. A 2.45 A2 2.15 2.35 a1 0 0.1 b 0.33 0.51 c 0.23 0.32 D 10.10 10.50 E 7.4 7.6 e 0.8 e3 8.8 F 2.3 G H 32/37 Max. 0.1 10.1 Doc ID 12266 Rev 7 10.
PAGE 33
VND5050J-E / VND5050K-E Table 19. Package and packing information PowerSSO-24™ mechanical data (continued) Millimeters Symbol Min. Typ. h Max. 0.4 k 0deg 8deg L 0.55 0.85 O 1.2 Q 0.8 S 2.9 T 3.65 U 1.0 N 10deg X 4.1 4.7 Y 6.5 7.
PAGE 34
Package and packing information 5.4 VND5050J-E / VND5050K-E PowerSSO-12™ packing information Figure 41. PowerSSO-12™ tube shipment (no suffix) B Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) C A 100 2000 532 1.85 6.75 0.6 All dimensions are in mm. Figure 42. PowerSSO-12™ tape and reel shipment (suffix “TR”) REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 12.4 60 18.
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VND5050J-E / VND5050K-E 5.5 Package and packing information PowerSSO-24™ packing information Figure 43. PowerSS0-24™ tube shipment (no suffix) Base Qty Bulk Qty Tube length (±0.5) A B C (±0.1) C B 49 1225 532 3.5 13.8 0.6 All dimensions are in mm. A Figure 44. PowerSSO-24™ tape and reel shipment (suffix “TR”) REEL DIMENSIONS Base Qty Bulk Qty A (max) B (min) C (± 0.2) F G (+2 / -0) N (min) T (max) 1000 1000 330 1.5 13 20.2 24.4 100 30.
PAGE 36
Revision history 6 VND5050J-E / VND5050K-E Revision history Table 20. Document revision history Date Revision 30-Mar-2006 1 Initial release. 11-Jan-2007 2 Minor formatting changes. New disclaimer attached. 3 Reformatted and restructured. Contents and lists of tables and figures added. Section 3.5: Maximum demagnetization energy (VCC = 13.5V) added. Table 4: Absolute maximum ratings: EMAX entries updated.
PAGE 37
VND5050J-E / VND5050K-E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.