Datasheet

VND5050AJ-E / VND5050AK-E Electrical specifications
Doc ID 12272 Rev 10 9/37
I
L(off)
Off-state output
current
(1)
V
IN
=V
OUT
=0V; V
CC
=13V;
T
j
= 25°C
V
IN
=V
OUT
=0V; V
CC
=13V;
T
j
= 125°C
0
0
0.01 3
5
µA
V
F
Output - V
CC
diode
voltage
(1)
-I
OUT
=4A; T
j
=150°C 0.7 V
1. For each channel.
2. PowerMOS leakage included.
Table 7. Switching (V
CC
= 13V; T
j
= 25°C)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time R
L
= 6.5Ω (see Figure 8)25µs
t
d(off)
Turn-off delay time R
L
= 6.5Ω (see Figure 8)35µs
dV
OUT
/dt
(on)
Turn-on voltage slope R
L
= 6.5Ω See Figure 21 V/µs
dV
OUT
/dt
(off)
Turn-off voltage slope R
L
= 6.5Ω See Figure 22 V/µs
W
ON
Switching energy losses
during t
won
R
L
= 6.5Ω (see Figure 8)0.24mJ
W
OFF
Switching energy losses
during t
woff
R
L
= 6.5Ω (see Figure 8)0.2mJ
Table 8. Logic input
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
IL
Input low level voltage 0.9 V
I
IL
Low level input current V
IN
= 0.9V 1 µA
V
IH
Input high level voltage 2.1 V
I
IH
High level input current V
IN
= 2.1V 10 µA
V
I(hyst)
Input hysteresis voltage 0.25 V
V
ICL
Input clamp voltage
I
IN
= 1mA
I
IN
= -1mA
5.5
-0.7
7V
V
V
CSDL
CS_DIS low level voltage 0.9 V
I
CSDL
Low level CS_DIS
current
V
CSD
= 0.9V 1 µA
V
CSDH
CS_DIS high level
voltage
2.1 V
I
CSDH
High level CS_DIS
current
V
CSD
= 2.1V 10 µA
Table 6. Power section (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit