Datasheet

Electrical specification VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04
8/31 Doc ID 7393 Rev 9
t
d(on)
Turn-on delay time
V
DD
= 15 V I
d
= 7 A
V
gen
= 5 V R
gen
= 2.2 KΩ
(see Figure 3)
1.5 4.5 µs
t
r
Rise time 9.7 30.0 µs
t
d(off)
Turn-off delay time 25.0 µs
t
f
Fall time 10.2 30.0 µs
(di/dt)
on
Turn-on current slope
V
DD
= 15 V I
D
= 7 A
V
gen
= 5 V R
gen
= R
IN MIN
=10 Ω
16 A/µs
Q
i
Total input charge
V
DD
= 12 V I
D
= 7 A V
in
= 5 V;
I
gen
= 2.13 mA (see Figure 7)
36.8 nC
Source drain diode
V
SD
(1)
Forward on voltage I
SD
= 7 A V
in
= 0 V 0.8 V
t
rr
Reverse recovery time
I
SD
= 7 A; di/dt = 40 A/µs
V
DD
= 30 V L = 200 µH
(see test circuit, Figure 4)
300 ns
Q
rr
Reverse recovery charge 0.8 µC
I
RRM
Reverse recovery current 5 A
Protection
I
lim
Drain current limit V
IN
= 5 V; V
DS
= 13 V 12 18 24 A
t
dlim
Step response current limit V
IN
= 5 V; V
DS
= 13 V 45 µs
T
jsh
Over temperature shutdown 150 175 200 °C
T
jrs
Over temperature reset 135 °C
I
gf
Fault sink current V
IN
= 5 V; V
DS
= 13 V; T
j
= T
jsh
10 15 20 mA
E
as
Single pulse avalanche energy
starting T
j
= 25 °C; V
DD
= 24 V
V
IN
= 5 V; R
gen
= R
IN MIN
= 10 Ω;
L = 24 mH (see Figure 5 and
Figure 6)
400 mJ
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 4. Electrical characteristics (continued)
Symbol Parameter Test Conditions Min Typ Max Unit