Datasheet

DocID11456 Rev 10 3/21
VN808CM-E Maximum ratings
1 Maximum ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
CC
DC supply voltage 45 V
-I
GND
DC ground pin reverse current
TRAN ground pin reverse current
(pulse duration < 1 ms)
-250
-6
mA
A
V
IN
Digital voltage on input pin 5.5 V
I
OUT
DC output current Internally limited A
-I
OUT
Reverse DC output current -2 A
I
IN
DC input current ± 10 mA
V
ESD
Electrostatic discharge (R = 1.5 kΩ; C = 100 pF) 2000 V
P
TOT
Power dissipation at T
C
= 25 °C 96 W
EAS
Single pulse avalanche energy per channel
8 channels driven simultaneously (T
AMB
= 125 °C,
I
OUT
= 0.6 A per channel)
1.15 J
T
J
Junction operating temperature Internally limited °C
T
C
Case operating temperature Internally limited °C
T
STG
Storage temperature -40 to 150 °C
Table 2. Thermal data
Symbol Parameter Value Unit
R
th(JC)
Thermal resistance junction-case Max. 1.3 °C/W
R
th(JA)
Thermal resistance junction-ambient
(1)
1. When mounted on FR4 printed circuit board with 0.5 cm
2
of copper area (at least 35 μm think) connected to
all TAB pins.
Max. 50 °C/W