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September 2013 Doc ID 15609 Rev 4 1/37

VN5E160AS-E

Single channel high side driver with analog

for automotive applications

Features

■

General

– Inrush current active management by

power limitation

– Very low standby current

– 3.0 V CMOS compatible inputs

– Optimized electromagnetic emission

– Very low electromagnetic susceptibility

– In compliance with the 2002/95/EC

european directive

– Very low current sense leakage

■

Diagnostic functions

– Proportional load current sense

– High-precision current sense for

wide-range currents

– Current sense disable

– OFF-state open-load detection

– Output short to V

detection

– Overload and short to ground

(power limitation) indication

■

Protections

– Undervoltage shutdown

– Overvoltage clamp

– Load current limitation

– Self-limiting of fast thermal transients

– Protection against loss of ground and loss

of V

– Overtemperature shutdown with

autorestart (thermal shutdown)

– Reverse battery protected

– Electrostatic discharge protection

Application

■

All types of resistive, inductive and capacitive

loads

■

Suitable as LED driver

Description

The VN5E160AS-E is a single-channel high-side

driver manufactured in the ST proprietary

VIPower™ M0-5 technology and housed in the

tiny SO-8 package. The VN5E160AS-E is

designed to drive 12 V automotive grounded

loads delivering protection, diagnostics and easy

3 V and 5 V CMOS compatible interface with any

microcontroller.

The device integrates advanced protective

functions such as load current limitation, inrush

and overload active management by power

limitation, overtemperature shut-off with

auto-restart and overvoltage active clamp. A

dedicated analog current sense pin is associated

with every output channel in order to provide

ehnanced diagnostic functions including fast

detection of overload and short-circuit to ground

through power limitation indication,

overtemperature indication, short-circuit to V

diagnosis and ON & OFF state open-load

detection. The current sensing and diagnostic

feedback of the whole device can be disabled by

pulling the CS_DIS pin high to allow sharing of

the external sense resistor with other similar

devices.

Max supply voltage V

41 V

Operating voltage range V

4.5 V to 28 V

Max ON-state resistance

(per ch.)

160 mΩ

Current limitation (typ) I

LIMH

10 A

OFF-state supply current I

2 µA

(1)

1. Typical value with all loads connected.

62

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www.st.com

Summary of content (37 pages)

PAGE 1
VN5E160AS-E Single channel high side driver with analog for automotive applications Features Max supply voltage VCC Operating voltage range VCC 4.5 V to 28 V Max ON-state resistance (per ch.) RON 160 mΩ Current limitation (typ) ILIMH 10 A IS 2 µA(1) OFF-state supply current 41 V ■ ■ General – Inrush current active management by power limitation – Very low standby current – 3.
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Contents VN5E160AS-E Contents 1 Block diagram and pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.3 Electrical characteristics . . . . . . . . . .
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VN5E160AS-E List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Pin function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 6 Absolute maximum ratings . . . . . . . . . . . . .
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List of figures VN5E160AS-E List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Figure 33. Figure 34. Figure 35. Figure 36. Figure 37. Figure 38. Figure 39. Figure 40. Figure 41. 4/37 Block diagram . .
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VN5E160AS-E 1 Block diagram and pin configuration Block diagram and pin configuration Figure 1. Block diagram 9&& 6LJQDO &ODPS 8QGHUYROWDJH ,1 &RQWURO 'LDJQRVWLF 3RZHU &ODPS '5,9(5 921 /LPLWDWLRQ 2YHU WHPSHUDWXUH &XUUHQW /LPLWDWLRQ 2)) 6WDWH 2SHQ ORDG &6B ',6 96(16(+ &6 &XUUHQW 6HQVH 287 29(5/2$' 3527(&7,21 $&7,9( 32:(5 /,0,7$7 ,21 /2*,& *1' *$3*&)7 Table 1. Pin function Name Function VCC Battery connection. OUT Power output. GND Ground connection.
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Block diagram and pin configuration Figure 2. VN5E160AS-E Configuration diagram (top view) 9&& 287 287 9&& 62 Table 2. 6/37 &6B',6 *1' &6 ,1 *$3*&)7 Suggested connections for unused and not connected pins Connection / pin Current sense N.C.
PAGE 7
VN5E160AS-E 2 Electrical specifications Electrical specifications Figure 3. Current and voltage conventions(1) ,6 9&& ,&6' 9) ,287 287 &6B',6 9287 9&6' ,,1 9&& ,1 ,6(16( &6 9,1 *1' 96(16( ,*1' *$3*&)7 1. VF = VOUT - VCC during reverse battery condition. 2.1 Absolute maximum ratings Stressing the device above the ratings listed in the “absolute maximum ratings” table may cause permanent damage to the device.
PAGE 8
Electrical specifications Table 3. Absolute maximum ratings (continued) Symbol Parameter Unit 36 mJ Maximum switching energy (single pulse) (L = 8 mH; RL = 0 Ω; Vbat = 13.5 V; Tjstart = 150 °C; IOUT = IlimL(Typ.) ) VESD Electrostatic discharge (human body model: R = 1.
PAGE 9
VN5E160AS-E 2.3 Electrical specifications Electrical characteristics Values specified in this section are for 8 V < VCC < 28 V; -40 °C < Tj < 150 °C, unless otherwise stated. Table 5. Power section Symbol Parameter Test conditions VCC Operating supply voltage VUSD VUSDhyst RON Vclamp IS IL(off1) VF Min. Typ. Max. Unit 13 28 V Undervoltage shut-down 3.5 4.5 V Undervoltage shut-down hysteresis 0.5 ON-state resistance Voltage clamp 4.
PAGE 10
Electrical specifications Table 7. Symbol VN5E160AS-E Logic inputs Parameter Test conditions VIL Low-level input voltage IIL Low-level input current VIH High-level input voltage IIH High-level input current VI(hyst) Hysteresis input voltage VICL ICSDL Low-level CS_DIS current VCSDH High-level CS_DIS voltage ICSDH High-level CS_DIS current VCSD(hyst) Hysteresis CS_DIS voltage Symbol CS_DIS voltage clamp 0.9 V 2.1 V 10 5.5 7 V -0.7 VCSD = 0.9 V µA 2.1 V VCSD = 2.1 V 10 0.
PAGE 11
VN5E160AS-E Electrical specifications Table 9. Symbol K0 K1 dK1/K1(1) K2 dK2/K2(1) K3 dK3/K3(1) ISENSE0 VSENSE Current sense (8 V < VCC < 18 V) Parameter Test conditions Min. Typ. Max. IOUT/ISENSE IOUT = 0.025 A, VSENSE = 0.5 V Tj = -40 °C to 150 °C 265 490 715 IOUT/ISENSE IOUT = 0.35 A, VSENSE = 0.5 V Tj = -40 °C to 150 °C Tj = 25 °C to 150 °C 355 385 465 465 575 545 Current sense ratio drift IOUT =0.35 A, VSENSE = 0.5 V Tj = -40 °C to 150 °C IOUT/ISENSE IOUT = 0.
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Electrical specifications Table 9. Symbol VN5E160AS-E Current sense (8 V < VCC < 18 V) (continued) Parameter Test conditions Delay response time tDSENSE2H from rising edge of IN pin VSENSE < 4 V, 0.025 A < IOUT < 1.5 A ISENSE=90% of ISENSE max (see Figure 4) Delay response time between rising edge of ΔtDSENSE2H output current and rising edge of current sense VSENSE < 4 V, ISENSE = 90% of ISENSEMAX, IOUT = 90% of IOUTMAX IOUTMAX=1.
PAGE 13
VN5E160AS-E Electrical specifications Figure 4. Current sense delay characteristics ,1387 &6B',6 /2$' &855(17 6(16( &855(17 W'6(16( + W'6(16( / W'6(16( + W'6(16( / $* 9 Figure 5. OFF-state open-load delay timing 2XWSXW VWXFN DW 9&& 9287 ! 92/ 9,1 96(16(+ 9&6 W'67.21 *$3*&)7 Figure 6.
PAGE 14
Electrical specifications Figure 7. VN5E160AS-E Delay response time between rising edge of ouput current and rising edge of current sense (CS enabled) 9,1 ǻW'6(16( + W ,287 ,2870$; ,2870$; W ,6(16( ,6(16(0$; ,6(16(0$; W $* 9 Figure 8.
PAGE 15
VN5E160AS-E Electrical specifications Figure 9. IOUT/ISENSE vs IOUT IOUT/ISENSE 620 590 560 A 530 B 500 470 C 440 410 D 380 E 350 320 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 IOUT (A) D: Min, Tj = 25 °C to 150 °C E: Min, Tj = -40 °C to 150 °C A: Max, Tj = -40 °C to 150 °C B: Max, Tj = 25 °C to 150 °C C: Typical, Tj = -40 °C to 150 °C Figure 10. Maximum current sense ratio drift vs load current(1) dK/K (%) 15 12 9 A 6 3 0 -3 -6 B -9 -12 -15 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.
PAGE 16
Electrical specifications Table 11. VN5E160AS-E Truth table Conditions IN OUT SENSE (VCSD = 0 V)(1) Normal operation L H L H 0 Nominal Overtemperature L H L L 0 VSENSEH Undervoltage L H L L 0 0 H X (no power limitation) Cycling (power limitation) Nominal Overload H VSENSEH Short circuit to GND (Power limitation) L H L L 0 VSENSEH OFF-state open-load (with external pull-up) L H VSENSEH 1.
PAGE 17
VN5E160AS-E Electrical specifications Table 12. ISO 7637-2: 2004(E) Electrical transient requirements (part 1) Test levels(1) Number of pulses or test times Burst cycle/pulse repetition time Delays and Impedance Test pulse III IV 1 -75 V -100 V 5000 pulses 0.5 s 5s 2 ms, 10 Ω 2a +37 V +50 V 5000 pulses 0.2 s 5s 50 µs, 2 Ω 3a -100 V -150 V 1h 90 ms 100 ms 0.1 µs, 50 Ω 3b +75 V +100 V 1h 90 ms 100 ms 0.1 µs, 50 Ω 4 -6 V -7 V 1 pulse 100 ms, 0.
PAGE 18
Electrical specifications 2.4 VN5E160AS-E Waveforms Figure 11. Normal operation 1RUPDO RSHUDWLRQ ,1387 1RPLQDO ORDG 1RPLQDO ORDG ,287 96(16( 9&6B',6 $* 9 Figure 12.
PAGE 19
VN5E160AS-E Electrical specifications Figure 13. Intermittent overload ,QWHUPLWWHQW 2YHUORDG ,1387 2YHUORDG ,/LP+ ! ,/LP/ ! 1RPLQDO ORDG ,287 96(16(+ ! 96(16( 9&6B',6 $* 9 Figure 14. OFF-state open-load with external circuitry 2)) 6WDWH 2SHQ /RDG ZLWK H[WHUQDO FLUFXWU\ ,1387 9287 ! 92/ 9287 92/ ,287 96(16(+ ! W'67.
PAGE 20
Electrical specifications VN5E160AS-E Figure 15. Short to VCC 6KRUW WR 9&& 9287 5HVLVWLYH 6KRUW WR 9&& +DUG 6KRUW WR 9&& 92/ 9287 ! 92/ ,287 W'67. RQ W'67. RQ 9&6B',6 $* 9 Figure 16.
PAGE 21
VN5E160AS-E 2.5 Electrical specifications Electrical characteristics curves Figure 17. OFF-state output current Figure 18. High-level input current ,ORII >Q$@ ,LK >X$@ 7JO 7 7F > &@ Figure 19. Input voltage clamp Figure 20.
PAGE 22
Electrical specifications VN5E160AS-E Figure 23. ON-state resistance vs. Tcase Figure 24. ON-state resistance vs. VCC 5RQ >P2KP@ 5RQ >P2KP@ ,RXW $ 9FF 9 5D ¡$ 5D ¡$ 5D ¡$ 5D ¡$ 7F > &@ *$3*&)7 *$3*&)7 Figure 25. Undervoltage shutdown Figure 26.
PAGE 23
VN5E160AS-E Electrical specifications Figure 29. High-level CS_DIS voltage Figure 30. CS_DIS voltage clamp 9FVGFO >9@ 9FVGK >9@ *JO N" 7F > &@ 7F > &@ *$3*&)7 *$3*&)7 Figure 31.
PAGE 24
Application information 3 VN5E160AS-E Application information Figure 32. Application schematic 9 9&& 5SURW &6B',6 'OG P& 5SURW ,1 287 5SURW &6 *1' 56(16( 9*1' &H[W 5*1' '*1' *$3*&)7 3.1 GND protection network against reverse battery 3.1.1 Solution 1: resistor in the ground line (RGND only) This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1. RGND ≤ 600 mV / (IS(on)max). 2.
PAGE 25
VN5E160AS-E Application information values. This shift varies depending on how many devices are ON in the case of several highside drivers sharing the same RGND. If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then ST suggests to utilize Solution 2 (see Section 3.1.2: Solution 2: a diode (DGND) in the ground line). 3.1.
PAGE 26
Application information 3.4 VN5E160AS-E Current sense and diagnostic The current sense pin performs a double function (see Figure 33: Current sense and diagnostic): ● Current mirror of the load current in normal operation, delivering a current proportional to the load one according to a known ratio KX. The current ISENSE can be easily converted to a voltage VSENSE by means of an external resistor RSENSE.
PAGE 27
VN5E160AS-E 3.4.1 Application information Short to VCC and OFF-state open load detection Short to VCC A short-circuit between VCC and output is indicated by the relevant current sense pin set to VSENSEH during the device OFF-state. Small or no current is delivered by the current sense during the ON-state depending on the nature of the short-circuit.
PAGE 28
Application information 3.5 VN5E160AS-E Maximum demagnetization energy (VCC = 13.5 V) Figure 34. Maximum turn-off current versus inductance (for each channel)(1) A B C , $ / P+ *$3*&)7 A: Tjstart = 150 °C single pulse B: Tjstart = 100 °C repetitive pulse C: Tjstart = 125 °C repetitive pulse 9,1 ,/ 'HPDJQHWL]DWLRQ 'HPDJQHWL]DWLRQ 'HPDJQHWL]DWLRQ W *$3*&)7 1. Values are generated with RL = 0 Ω.
PAGE 29
VN5E160AS-E Package and PCB thermal data 4 Package and PCB thermal data 4.1 SO-8 thermal data Figure 35. SO-8 PC board(1) ("1($'5 1. Layout condition of Rth and Zth measurements (PCB: FR4 area = 4.8 mm x 4.8 mm, PCB thickness = 2 mm, Cu thickness = 35 µm, Copper areas: from minimum pad lay-out to 2 cm2). Figure 36. Rthj-amb vs PCB copper area in open box free air condition RTHj_amb(°C/W) 110 100 90 80 70 60 0 0.5 1 1.5 2 2.
PAGE 30
Package and PCB thermal data VN5E160AS-E Figure 37. SO-8 thermal impedance junction ambient single pulse ZTH (°C/W) 1000 Footprint 100 2 cm2 10 1 0.1 0.0001 0.001 0.01 0.1 1 Time (s) 10 100 1000 Equation 5: pulse calculation formula Z THδ = R TH ⋅δ+Z THtp (1 – δ) where δ = tP/T Figure 38. Thermal fitting model of an HSD in SO-8(1) *$3*&)7 1.
PAGE 31
VN5E160AS-E Table 15. Package and PCB thermal data Thermal parameters Area/island (cm2) Footprint R1 (°C/W) 1.2 R2 (°C/W) 6 R3 (°C/W) 3.5 R4 (°C/W) 21 R5 (°C/W) 16 R6 (°C/W) 58 C1 (W.s/°C) 0.0008 C2 (W.s/°C) 0.0016 C3 (W.s/°C) 0.0075 C4 (W.s/°C) 0.045 C5 (W.s/°C) 0.35 C6 (W.s/°C) 1.
PAGE 32
Package and packing information VN5E160AS-E 5 Package and packing information 5.1 ECOPACK® In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 5.2 Package mechanical data Figure 39.
PAGE 33
VN5E160AS-E Package and packing information Table 16. SO-8 mechanical data mm. Dim. Min. Typ. A a1 Max. 1.75 0.1 0.25 a2 1.65 a3 0.65 0.85 b 0.35 0.48 b1 0.19 0.25 C 0.25 0.5 c1 45 (typ.) D 4.8 5 E 5.8 6.2 e 1.27 e3 3.81 F 3.8 4 L 0.4 1.27 M 0.6 S L1 8 (max.) 0.8 Doc ID 15609 Rev 4 1.
PAGE 34
Package and packing information 5.3 VN5E160AS-E Packing information Figure 40. SO-8 tube shipment (no suffix) % Base q.ty Bulk q.ty Tube length (± 0.5) A B C (± 0.1) & $ 100 2000 532 3.2 6 0.6 All dimensions are in mm. ("1($'5 Figure 41.
PAGE 35
VN5E160AS-E 6 Order codes Order codes Table 17.
PAGE 36
Revision history 7 VN5E160AS-E Revision history Table 18. 36/37 Document revision history Date Revision Changes 28-Apr-2009 1 Initial release. 25-Jan-2010 2 Updated Table 10: Openload detection (8 V < VCC < 18 V). 25-May-2011 3 Table 9: Current sense (8 V < VCC < 18 V): – tDSENSE2H: updated typical and maximum values 18-Sep-2013 4 Updated Disclaimer.
PAGE 37
VN5E160AS-E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.