Datasheet

DocID023274 Rev 4 9/28
TSX56x, TSX56xA Electrical characteristics
28
Table 6. Electrical characteristics at V
CC+
= +16 V with V
CC-
= 0 V, V
icm
= V
CC
/2, T
amb
= 25 °C, and
R
L
= 10 kΩ connected to V
CC
/2 (unless otherwise specified)
Symbol Parameter Conditions Min. Typ. Max. Unit
DC performance
V
io
Offset voltage
TSX56xA, T = 25 °C 600
μV
TSX56xA, -40 °C < T < 125 °C 1800
TSX56x, T = 25 °C 1
mV
TSX56x, -40 °C < T < 125 °C 2.2
ΔV
io
/ΔT Input offset voltage drift -40 °C < T < 125 °C
(1)
212μV/°C
ΔV
io
Long-term input offset voltage
drift
T = 25 °C
(2)
1.6
I
io
Input offset current
(V
out
= V
CC
/2)
T = 25 °C 1 100
(3)
pA
-40 °C < T < 125 °C 1 200
(3)
I
ib
Input bias current
(V
out
= V
CC
/2)
T = 25 °C 1 100
(3)
-40 °C < T < 125 °C 1 200
(3)
CMR1
Common mode rejection ratio
CMR = 20 log (ΔV
ic
/ΔV
io
)
(V
ic
= -0.1 V to V
CC
- 1.5 V,
V
out
= V
CC
/2, R
L
> 1 MΩ)
T = 25 °C 76 95
dB
-40 °C < T < 125 °C 72
CMR2
Common mode rejection ratio
CMR = 20 log (ΔV
ic
/ΔV
io
)
(V
ic
= -0.1 V to V
CC
+ 0.1 V,
V
out
= V
CC
/2, R
L
> 1 MΩ)
T = 25 °C 60 78
-40 °C < T < 125 °C 56
SVR
Common mode rejection ratio
20 log (ΔV
CC
/ΔV
io
)
(V
CC
= 3 V to 16 V,
V
out
= V
icm
= V
CC
/2)
T = 25 °C 76 90
-40 °C < T < 125 °C 72
A
vd
Large signal voltage gain
(V
out
= 0.5 V to (V
CC
- 0.5 V),
R
L
> 1 MΩ)
T = 25 °C 85
-40 °C < T < 125 °C 83
V
OH
High level output voltage
(V
OH
= V
CC
- V
out
)
R
L
= 10 kΩ, T = 25 °C
R
L
= 10 kΩ, -40 °C < T < 125 °C
70
100
mV
V
OL
Low level output voltage
R
L
= 10 kΩ, T = 25 °C
R
L
= 10 kΩ, -40 °C < T < 125 °C
70
100
I
out
I
sink
V
out
= V
CC
, T = 25 °C 40 92
mA
V
out
= V
CC
, -40 °C < T < 125 °C 35
I
source
V
out
= 0 V, T = 25 °C 30 90
V
out
= 0 V, -40 °C < T < 125 °C 25
I
CC
Supply current
(per channel, V
out
= V
CC
/2,
R
L
> 1 MΩ)
T = 25 °C 250 360
µA
-40 °C < T < 125 °C 400
μV
month
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