Datasheet

Electrical characteristics TSX56x, TSX56xA
10/28 DocID023274 Rev 4
AC performance
GBP Gain bandwidth product
R
L
= 10 kΩ, C
L
= 100 pF
750 900
kHz
F
u
Unity gain frequency 750
Φ
m
Phase margin 55 Degree
G
m
Gain margin 9 dB
SR Slew rate
R
L
= 10 kΩ, C
L
= 100 pF,
V
out
= 0.5 V to V
CC
- 0.5 V
1.1 V/μs
∫ e
n
Low-frequency peak-to-peak
input noise
Bandwidth: f = 0.1 to 10 Hz 15 µV
pp
e
n
Equivalent input noise voltage
density
f = 1 kHz
f = 10 kHz
48
27
THD+N
Total harmonic distortion +
noise
Follower configuration, f
in
= 1 kHz,
R
L
= 100 kΩ, V
icm
= (V
CC
- 1.5 V)/2,
BW = 22 kHz, V
out
= 5 V
pp
0.0005 %
1. See Section 4.3: Input offset voltage drift over temperature on page 15.
2. Typical value is based on the V
io
drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and
assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration.
3. Guaranteed by design.
Table 6. Electrical characteristics at V
CC+
= +16 V with V
CC-
= 0 V, V
icm
= V
CC
/2, T
amb
= 25 °C, and
R
L
= 10 kΩ connected to V
CC
/2 (unless otherwise specified) (continued)
Symbol Parameter Conditions Min. Typ. Max. Unit
nV
Hz
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