Datasheet

Electrical characteristics TSV731, TSV732, TSV734
10/29 DocID023708 Rev 2
Table 5. Electrical characteristics at V
CC+
= 5 V with V
CC-
= 0 V, V
icm
= V
CC
/2, T = 25 °C,
and R
L
= 10 kΩ connected to V
CC
/2 (unless otherwise specified)
Symbol Parameter Conditions Min. Typ. Max. Unit
DC performance
V
io
Input offset voltage
T = 25 °C 200
μV-40 °C < T< 85 °C 500
-40 °C < T< 125 °C 650
ΔV
io
/ΔT Input offset voltage drift -40 °C < T< 125 °C
(1)
4.5 μV/°C
ΔV
io
Long-term input offset
voltage drift
T = 25 °C
(2)
0.7
I
io
Input offset current
(V
out
= V
CC
/2)
T = 25 °C 1 10
(3)
pA
-40 °C < T< 125 °C 1 300
(3)
I
ib
Input bias current
(V
out
= V
CC
/2)
T = 25 °C 1 10
(3)
-40 °C < T< 125 °C 1 300
(3)
CMR
Common mode rejection
ratio 20 log (ΔV
icm
/ΔV
io
)
V
icm
= 0 V to V
CC
,
V
out
= V
CC
/2, R
L
> 1 MΩ
T = 25 °C 80 94
dB
-40 °C < T< 125 °C 78
SVR
Supply voltage rejection ratio
20 log (ΔV
CC
/ΔV
io
)
V
CC
= 1.5 to 5.5 V, V
ic
= 0 V
T = 25 °C 76 90
-40 °C < T< 125 °C 74
A
vd
Large signal voltage gain
V
out
= 0.5 V to (V
CC
- 0.5 V)
R
L
= 10 kΩ, T = 25 °C 105
R
L
= 10 kΩ, -40 °C < T< 125 °C 90
EMIRR
EMI rejection ratio
EMIRR = 20 log (V
RFpeak
/ΔV
io
)
V
RF
= 100 mV
RFpeak,
f = 400 MHz 41
(4)
V
RF
= 100 mV
RFpeak,
f = 900 MHz 51
(4)
V
RF
= 100 mV
RFpeak
, f = 1800 MHz 61
(4)
V
RF
= 100 mV
RFpeak
, f = 2400 MHz 66
(4)
V
OH
High level output voltage
(V
OH
= V
CC
- V
out
)
T = 25 °C 75
mV
-40 °C < T< 125 °C 80
V
OL
Low level output voltage
T = 25 °C 40
-40 °C < T< 125 °C 60
I
out
I
sink (
V
out
= V
CC)
T = 25 °C 40 68
mA
-40 °C < T< 125 °C 25
I
source
(V
out
= 0 V)
T = 25 °C 40 52
-40 °C < T< 125 °C 25
I
CC
Supply current (per channel,
V
out
= V
CC
/2, R
L
> 1 MΩ)
T = 25 °C 60 70
µA
-40 °C < T< 125 °C 85
μV
month
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