Datasheet

TSV63x, TSV63xA Electrical characteristics
Doc ID 15688 Rev 5 5/30
3 Electrical characteristics
Table 4. Electrical characteristics at V
CC+
= +1.8 V with V
CC-
= 0 V, V
icm
= V
CC
/2, T
amb
= 25° C,
and R
L
connected to V
CC
/2 (unless otherwise specified)
Symbol Parameter Conditions Min. Typ. Max. Unit
DC performance
V
io
Offset voltage
TSV63x
TSV63xA
TSV633AIST - MiniSO10
3
0.8
1
mV
T
min
< T
op
< T
max
- TSV63x
T
min
< T
op
< T
max
- TSV63xA
T
min
< T
op
< T
max
- TSV633AIST
4.5
2
2.2
ΔV
io
/ΔT Input offset voltage drift 2 μV/°C
I
io
Input offset current
(V
out
= V
CC
/2) 1 10
(1)
pA
T
min
< T
op
< T
max
1100
I
ib
Input bias current
(V
out
= V
CC
/2) 1 10
(1)
T
min
< T
op
< T
max
1100
CMR
Common mode rejection
ratio 20 log (ΔV
ic
/ΔV
io
)
0 V to 1.8 V, V
out
= 0.9 V 53 74
dB
T
min
< T
op
< T
max
51
A
vd
Large signal voltage gain
R
L
= 10 kΩ, V
out
= 0.5 V to 1.3 V 85 95
T
min
< T
op
< T
max
80
V
OH
High level output voltage
R
L
= 10 kΩ
T
min
< T
op
< T
max
35
50
5
mV
V
OL
Low level output voltage
R
L
= 10 kΩ
T
min
< T
op
< T
max
435
50
I
out
I
sink
V
o
= 1.8 V 6 12
mA
T
min
< T
op
< T
max
4
I
source
V
o
= 0 V 6 10
T
min
< T
op
< T
max
4
I
CC
Supply current
(per channel)
No load, V
out
= V
CC
/2 40 50 60
µA
T
min
< T
op
< T
max
62
AC performance
GBP Gain bandwidth product R
L
= 2 kΩ, C
L
= 100 pF, f = 100 kHz 700 790 kHz
φm Phase margin R
L
= 2 kΩ, C
L
= 100 pF 45 Degrees
G
m
Gain margin R
L
= 2 kΩ, C
L
= 100 pF 13 dB
SR Slew rate R
L
= 2 kΩ, C
L
= 100 pF, Av = 1 0.2 0.27 V/μs
e
n
Equivalent input noise
voltage
f = 1 kHz
f = 10 kHz
60
33
1. Guaranteed by design.
nV
Hz
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