Datasheet

DocID15242 Rev 5 7/26
TSV630, TSV630A, TSV631, TSV631A Electrical characteristics
26
Table 5. Electrical characteristics at V
CC+
= +3.3 V, V
CC-
= 0 V, V
icm
= V
CC
/2, T
amb
= 25 ° C,
R
L
connected to V
CC
/2 (unless otherwise specified)
Symbol Parameter Conditions Min. Typ. Max. Unit
DC performance
V
io
Offset voltage
TSV630-TSV631
TSV630A-TSV631A
3
0.5
mV
T
min
< T
op
< T
max
TSV630-TSV631
TSV630A-TSV631A
4.5
2
ΔV
io
/ΔT Input offset voltage drift 2 μV/°C
I
io
Input offset current
110
(1)
pA
T
min
< T
op
< T
max
1100
I
ib
Input bias current
110
(1)
T
min
< T
op
< T
max
1100
CMR
Common mode rejection
ratio 20 log (ΔV
ic
/ΔV
io
)
0 V to 3.3 V, V
out
= 1.75 V 57 79
dB
T
min
< T
op
< T
max
53
A
vd
Large signal voltage gain
R
L
= 10 kΩ, V
out
= 0.5 V to 2.8 V 88 98
T
min
< T
op
< T
max
83
V
OH
High level output voltage
R
L
= 10 kΩ 35 6
mV
T
min.
< T
op
< T
max
50
V
OL
Low level output voltage
R
L
= 10 kΩ 735
T
min
< T
op
< T
max
50
I
out
I
sink
V
o
= 3.3 V 30 45
mA
T
min
< T
op
< T
max
25 42
I
source
V
o
= 0 V 30 38
T
min
< T
op
< T
max
25
I
CC
Supply current
SHDN = V
CC+
No load, V
out
= 1.75 V 43 55 64
µA
T
min
< T
op
< T
max
66
AC performance
GBP Gain bandwidth product
R
L
= 2 kΩ, C
L
= 100 pF,
f = 100 kHz
710 860 kHz
φm Phase margin
R
L
= 2 kΩ, C
L
= 100 pF
50 Degrees
G
m
Gain margin 11 dB
SR Slew rate R
L
= 2 kΩ, C
L
= 100 pF, Av = 1 0.22 0.29 V/μs
e
n
Equivalent input noise
voltage
f = 1 kHz
f = 10 kHz
64
51
1. Guaranteed by design.
nV
Hz
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