Datasheet

TSV62x, TSV62xA Electrical characteristics
Doc ID 15689 Rev 5 7/25
Table 6. Electrical characteristics at V
CC+
= +3.3 V with V
CC-
= 0 V, V
icm
= V
CC
/2, T
amb
= 25° C,
and R
L
connected to V
CC
/2 (unless otherwise specified)
Symbol Parameter Conditions Min. Typ. Max. Unit
DC performance
V
io
Offset voltage
TSV62x
TSV62xA
TSV623AIST - MiniSO10
4
0.8
1
mV
TSV62x -T
min
< T
op
< T
max
TSV62xA - T
min
< T
op
< T
max
TSV623AIST - T
min
< T
op
< T
max
6
2
2.2
ΔV
io
/ΔT Input offset voltage drift 2 μV/°C
I
io
Input offset current 1 10
(1)
pA
T
min
< T
op
< T
max
1100
I
ib
Input bias current
110
(1)
T
min
< T
op
< T
max
1100
CMR
Common mode rejection
ratio 20 log (ΔV
ic
/ΔV
io
)
0 V to 3.3 V, V
out
= 1.65 V 57 79
dB
T
min
< T
op
< T
max
53
A
vd
Large signal voltage gain
R
L
=10 kΩ, V
out
= 0.5 V to 2.8 V 81 98
T
min
< T
op
< T
max
76
V
OH
High level output voltage
R
L
= 10 kΩ
T
min
< T
op
< T
max
35
50
5
mV
V
OL
Low level output voltage
R
L
= 10 kΩ
T
min
< T
op
< T
max
435
50
I
out
Isink
V
o
= 5 V 23 45
mA
T
min
< T
op
< T
max
20
Isource
V
o
= 0 V 23 38
T
min
< T
op
< T
max
20
I
CC
Supply current (per
operator)
No load, V
out
= 2.5 V 26 33
µA
T
min
< T
op
< T
max
35
AC performance
GBP Gain bandwidth product R
L
= 10 kΩ, C
L
= 100 pF, f = 100 kHz 310 380
kHz
F
u
Unity gain frequency
R
L
= 10 kΩ, C
L
= 100 pF
310
φm Phase margin 41 Degrees
G
m
Gain margin 8 dB
SR Slew rate R
L
= 10 kΩ, C
L
= 100 pF, A
V
= 1 0.11 0.175 V/μs
1. Guaranteed by design.