Datasheet

Electrical characteristics TSV620, TSV620A, TSV621, TSV621A
4/24 Doc ID 14912 Rev 2
2 Electrical characteristics
Table 3. Electrical characteristics at V
CC+
= +1.8 V with V
DD
= 0 V, V
icm
= V
CC
/2, T
op
= 25° C,
and R
L
connected to V
CC
/2 (unless otherwise specified)
Symbol Parameter Conditions Min. Typ. Max. Unit
DC performance
V
io
Offset voltage
TSV62x
TSV62xA
4
0.8
mV
T
min
< T
op
< T
max
TSV62x
TSV62xA
6
2.8
DV
io
Input offset voltage drift 2 μV/°C
I
io
Input offset current
(V
out
=V
CC
/2)
110
(1)
pA
T
min
< T
op
< T
max
1100
I
ib
Input bias current
(V
out
=V
CC
/2)
110
(1)
pA
T
min
< T
op
< T
max
1100
CMR
Common mode rejection ratio
20 log (
ΔV
ic
/ΔV
io
)
0 V to 1.8 V, V
out
= 0.9 V 53 74
dB
T
min
< T
op
< T
max
51
A
vd
Large signal voltage gain
R
L
= 10 kΩ, V
out
= 0.5 V to 1.3 V 78 95
dB
T
min
< T
op
< T
max
73
V
OH
High level output voltage
R
L
=10kΩ 35 5
mV
T
min
< T
op
< T
max
50
V
OL
Low level output voltage
R
L
=10kΩ 435
mV
T
min
< T
op
< T
max
50
I
out
Isink
V
o
= 1.8 V 6 12
mA
T
min
< T
op
< T
max
4
Isource
V
o
= 0 V 6 10
mA
T
min
< T
op
< T
max
4
I
CC
Supply current (per operator)
No load, V
out
=V
CC
/2 25 31
µA
T
min
< T
op
< T
max
33
AC performance
GBP Gain bandwidth product
R
L
=10kΩ, C
L
= 100 pF,
f=100kHz
275 340 kHz
F
u
Unity gain frequency R
L
=10kΩ, C
L
= 100 pF 280 kHz
φmPhase margin R
L
=10kΩ, C
L
= 100 pF 45 Degrees
G
m
Gain margin R
L
=10kΩ, C
L
= 100 pF 9 dB
SR Slew rate R
L
=10kΩ, C
L
= 100 pF, Av = 1 0.084 0.11 0.14 V/μs
1. Guaranteed by design.