Datasheet

Electrical characteristics TSV620, TSV620A, TSV621, TSV621A
6/24 Doc ID 14912 Rev 2
Table 5. V
CC+
= +3.3 V, V
CC-
= 0 V, V
icm
= V
CC
/2, T
op
= 25° C, R
L
connected to V
CC
/2
(unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
DC performance
V
io
Offset voltage
TSV62x
TSV62xA
4
0.8
mV
T
min
< T
op
< T
max
TSV62x
TSV62xA
6
2.8
DV
io
Input offset voltage drift 2 μV/°C
I
io
Input offset current
110
(1)
pA
T
min
< T
op
< T
max
1 100 pA
I
ib
Input bias current
110
(1)
pA
T
min
< T
op
< T
max
1 100 pA
CMR
Common mode rejection ratio
20 log (
ΔV
ic
/ΔV
io
)
0V to 3.3V, V
out
= 1.75 V 57 79 dB
T
min
< T
op
< T
max
53 dB
A
vd
Large signal voltage gain
R
L
=10 kΩ, V
out
= 0.5 V to 2.8 V 81 98 dB
T
min
< T
op
< T
max
76 dB
V
OH
High level output voltage
R
L
=10kΩ 35 5
mV
T
min
< T
op
< T
max
50
V
OL
Low level output voltage
R
L
=10kΩ 435
mV
T
min
< T
op
< T
max
50
I
out
Isink
V
o
= 5 V 30 45
mA
T
min
< T
op
< T
max
25
Isource
V
o
= 0 V 30 38
mA
T
min
< T
op
< T
max
25
I
CC
Supply current (per operator)
No load, V
out
=2.5V 26 33 µA
T
min
< T
op
< T
max
35 µA
AC performance
GBP Gain bandwidth product
R
L
=10kΩ, C
L
= 100 pF,
f = 100 kHz
310 380 kHz
F
u
Unity gain frequency R
L
= 10 kΩ, C
L
= 100 pF 310 kHz
φmPhase margin R
L
= 10 kΩ, C
L
= 100 pF 45 Degrees
G
m
Gain margin R
L
= 10 kΩ, C
L
= 100 pF 9 dB
SR Slew rate R
L
=10kΩ, C
L
= 100 pF, A
V
= 1 0.094 0.12 V/μs
1. Guaranteed by design.