Datasheet

TSV611, TSV611A, TSV612, TSV612A Electrical characteristics
Doc ID 15768 Rev 2 3/19
2 Electrical characteristics
Table 3. Electrical characteristics at V
CC+
= +1.8 V
with V
CC-
= 0 V, V
icm
= V
CC
/2, T
amb
= 25° C, and R
L
connected to V
CC
/2
(unless otherwise specified)
Symbol Parameter Conditions Min. Typ. Max. Unit
DC performance
V
io
Offset voltage
TSV61x
TSV61xA
4
0.8
mV
T
min.
< T
op
< T
max.
TSV61x
T
min.
< T
op
< T
max
TSV61xA
5
2
DV
io
Input offset voltage drift 2 μV/°C
I
io
Input offset current
(V
out
=V
cc
/2)
110
(1)
pA
T
min.
< T
op
< T
max.
1 100 pA
I
ib
Input bias current
(V
out
=V
cc
/2)
110
(1)
pA
T
min.
< T
op
< T
max.
1 100 pA
CMR
Common mode rejection
ratio 20 log (ΔV
ic
/ΔV
io
)
0 V to 1.8 V, V
out
= 0.9 V 55 71 dB
T
min.
< T
op
< T
max.
53 dB
A
vd
Large signal voltage gain
R
L
= 10 kΩ, Vout = 0.5 V to
1.3 V
78 83 dB
T
min.
< T
op
< T
max.
74 dB
V
OH
High level output voltage
R
L
=10kΩ
T
min.
< T
op
< T
max.
35
50
4
mV
V
OL
Low level output voltage
R
L
=10kΩ
T
min.
< T
op
< T
max.
735
50
mV
I
out
Isink
V
o
= 1.8 V
T
min.
< T
op
< T
max.
9
9
13
mA
Isource
V
o
= 0 V
T
min.
< T
op
< T
max.
8
8
10
I
CC
Supply current (per
operator)
No load, V
out
=V
cc
/2 6.5 9 12 µA
T
min.
< T
op
< T
max.
612.5µA
AC performance
GBP Gain bandwidth product R
L
=10kΩ, C
L
= 20 pF 100 kHz
φm Phase margin R
L
=10kΩ, C
L
= 20 pF 60 Degrees
G
m
Gain margin R
L
=10kΩ, C
L
=20pF 9.5 dB
SR Slew rate
R
L
=10kΩ, C
L
=20pF,
V
out
= 0.5V to 1.3V
0.03 V/μs