Datasheet

TSV611, TSV611A, TSV612, TSV612A Electrical characteristics
Doc ID 15768 Rev 2 5/19
Table 4. V
CC+
= +3.3 V, V
CC-
= 0 V, V
icm
= V
CC
/2, T
amb
= 25° C,
R
L
connected to V
CC
/2 (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
DC performance
V
io
Offset voltage
TSV61x
TSV61xA
4
0.8
mV
T
min
<T
op
<T
max
TSV61x
T
min
<T
op
<T
max
TSV61xA
5
2
DV
io
Input offset voltage drift 2 μV/°C
I
io
Input offset current
110
(1)
1. Guaranteed by design.
pA
T
min.
< T
op
< T
max.
1 100 pA
I
ib
Input bias current
110
(1)
pA
T
min.
< T
op
< T
max.
1 100 pA
CMR
Common mode rejection
ratio 20 log (ΔV
ic
/ΔV
io
)
0 V to 3.3 V, V
out
= 1.75 V 61 76 dB
T
min.
< T
op
< T
max.
58 dB
A
vd
Large signal voltage gain
R
L
=10kΩ, Vout = 0.5 V to
2.8 V
85 92 dB
T
min.
< T
op
< T
max.
83 dB
V
OH
High level output voltage
R
L
=10kΩ
T
min.
< T
op
< T
max.
35
50
5
mV
V
OL
Low level output voltage
R
L
=10kΩ
T
min.
< T
op
< T
max.
10 35
50
mV
I
out
Isink
V
o
= V
CC
T
min.
< T
op
< T
max.
37
35
44
mA
Isource
V
o
= 0 V
T
min.
< T
op
< T
max.
32
30
38
I
CC
Supply current (per
operator)
No load, V
out
=V
CC
/2 6.5 9.5 12.5 µA
T
min.
< T
op
< T
max.
613µA
AC performance
GBP Gain bandwidth product R
L
=10kΩ, C
L
=20pF 110 kHz
φm Phase margin R
L
= 10 kΩ, C
L
=20pF 60 Degrees
G
m
Gain margin R
L
= 10 kΩ, C
L
=20pF, 9.5 dB
SR Slew rate
R
L
=10kΩ, C
L
= 20 pF, V
out
= 0.5V to 2.8V
0.035 V/μs
e
n
Equivalent input noise
voltage
f=1kHz 110
nV
Hz
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