Datasheet
Table Of Contents
- Table 1. Device summary
- 1 Package pin connections
- 2 Absolute maximum ratings and operating conditions
- 3 Electrical characteristics
- Table 4. Electrical characteristics at VCC+ = +2.7 V with VCC- = 0 V, Vicm = VCC/2, T = 25 C, and RL = 10 kW connected to VCC/2 (unless otherwise specified)
- Table 5. Electrical characteristics at VCC+ = +3.3 V with VCC- = 0 V, Vicm = VCC/2, T = 25 C, and RL = 10 kW connected to VCC/2 (unless otherwise specified)
- Table 6. Electrical characteristics at VCC+ = +5 V with VCC- = 0 V, Vicm = VCC/2, T = 25 C, and RL = 10 kW connected to VCC/2 (unless otherwise specified)
- Figure 2. Supply current vs. supply voltage at Vicm = VCC/2
- Figure 3. Input offset voltage distribution at VCC = 5 V, Vicm = 2.5 V
- Figure 4. Input offset voltage temperature coefficient distribution
- Figure 5. Input offset voltage vs. input common mode voltage at VCC = 5 V
- Figure 6. Input offset voltage vs. temperature at VCC = 5 V
- Figure 7. Output current vs. output voltage at VCC = 2.7 V
- Figure 8. Output current vs. output voltage at VCC = 5.5 V
- Figure 9. Bode diagram at VCC = 2.7 V, RL = 10 kW
- Figure 10. Bode diagram at VCC = 2.7 V, RL = 2 kW
- Figure 11. Bode diagram at VCC = 5.5 V, RL = 10 kW
- Figure 12. Bode diagram at VCC = 5.5 V, RL = 2 kW
- Figure 13. Noise vs. frequency
- Figure 14. Positive slew rate vs. supply voltage
- Figure 15. Negative slew rate vs. supply voltage
- Figure 16. THD+N vs. frequency at VCC = 2.7 V
- Figure 17. THD+N vs. frequency at VCC = 5.5 V
- Figure 18. THD+N vs. output voltage at VCC = 2.7 V
- Figure 19. THD+N vs. output voltage at VCC = 5.5 V
- Figure 20. Output impedance versus frequency in closed-loop configuration
- Figure 21. Response to a 100 mV input step for gain = 1 at VCC = 5.5 V rising edge
- Figure 22. Response to a 100 mV input step for gain = 1 at VCC = 5.5 V falling edge
- Figure 23. PSRR vs. frequency at VCC = 2.7 V
- Figure 24. PSRR vs. frequency at VCC = 5.5 V
- 4 Application information
- 5 Package information
- Figure 30. SC70-5 package outline
- Table 7. SC70-5 package mechanical data
- Figure 31. DFN8 2 x 2 x 0.6, 8 pitch, 0.5 mm package outline
- Table 8. DFN8 2 x 2 x 0.6, 8 pitch, 0.5 mm package mechanical data
- Figure 32. DFN8 2 x 2 0.6, 8 pitch, 0.5 mm footprint recommendation
- Figure 33. MiniSO8 package outline
- Table 9. MiniSO8 package mechanical data
- Figure 34. QFN16 - 3 x 3 x 0.9 mm, pad 1.7 - package outline
- Table 10. QFN16 - 3 x 3 x 0.9 mm, pad 1.7 - package mechanical data
- Figure 35. QFN16 - 3 x 3 x 0.9 mm, pad 1.7 - footprint recommendation
- Figure 36. TSSOP14 body 4.40 mm, lead pitch 0.65 mm - package outline
- Table 11. TSSOP14 body 4.40 mm, lead pitch 0.65 mm - package mechanical data
- 6 Ordering information
- 7 Revision history
TSV521, TSV522, TSV524, TSV521A, TSV522A, TSV524A Application information
Doc ID 022743 Rev 1 17/27
For the operational amplifier, a follower stress condition is used for the reliability evaluation,
with V
CC
defined in function of the Maximum operating voltage and the absolute maximum
rating (as recommended by the JEDEC standards).
The V
io
drift, in µV, of the product after 1000 h duration of stress is tracked with parameters
at different measurement conditions, as for example:
Equation 6
V
CC
= max. V
op
with V
icm
=V
CC
/2
Finally, knowing the calculated number of months and with the measured drift value of the
V
io
(corresponding to the electrical characteristics of the respective table) after 1000 h
duration of stress, the ratio of the V
io
drift over the square of months,
Δ
V
io
in µV/√month, is
defined as the long term drift parameter, the parameter estimating the reliability
performance of the product.
Equation 7
ΔV
io
= V
io
drift / √(months)
4.8 PCB layouts
For correct operation, it is advised to add 10 nF decoupling capacitors as close as possible
to the power supply pins.
4.9 Macromodel
Accurate macromodels of the TSV52x device are available on STMicroelectronics™ website
at www.st.com. This model is a trade-off between accuracy and complexity (that is, time
simulation) of the TSV52x operational amplifiers. It emulates the nominal performance of
a typical device within the specified operating conditions mentioned in the datasheet. It also
helps to validate a design approach and to select the appropriate operational amplifier, but it
does not replace onboard measurements.