Datasheet

DocID5561 Rev 10 5/17
TS951, TS952, TS954 Electrical characteristics
17
2 Electrical characteristics
Table 3. Electrical characteristics at V
CC
= +3 V, V
DD
= 0 V , R
L
connected to V
CC
/2,
T
amb
= 25 °C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
V
io
Input offset voltage
T
min
≤ T
amb
≤ T
max
6
8
mV
DV
io
Input offset voltage drift 2 µV/°C
I
io
Input offset current
T
min
≤ T
amb
≤ T
max
130
80
nA
I
ib
Input bias current
V
icm
= V
CC
/2
T
min
≤ T
amb
≤ T
max
35 100
200
nA
CMR Common mode rejection ratio 50 80
dB
SVR
Supply voltage rejection ratio
V
CC
= 2.7 V to 3.3 V 60 80
A
vd
Large signal voltage gain
V
o
= 2 V
pk-pk
, R
L
= 600 Ω
80
V
OH
High level output voltage
R
L
= 600 Ω
2.8 2.9 V
V
OL
Low level output voltage
R
L
= 600 Ω
80 250 mV
I
sc
Output short-circuit current 10
mA
I
CC
Supply current (per amplifier)
No load, V
icm
= V
CC
/2
0.9 1.3
GBP
Gain bandwidth product
R
L
= 2 k Ω
3MHz
SR Slew rate 1 V/µs
∅m
Phase margin at unit gain
R
L
= 600 Ω, C
L
=100 pF
60 Degrees
Gm
Gain margin
R
L
= 600 Ω, C
L
=100 pF
10 dB
e
n
Equivalent input noise voltage
f = 1 kHz
25
THD
Total harmonic distortion
V
out
= 4 V
pk-pk
, F = 10 kHz, A
V
= 2, R
L
=10 kΩ
0.01 %
nV
Hz
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