Datasheet

Electrical characteristics TS921
4/16 Doc ID 5560 Rev 4
3 Electrical characteristics
Table 4. Electrical characteristics for V
CC
=3 V, V
DD
=0 V, V
icm
=V
CC
/2, R
L
connected to
V
CC
/2, T
amb
= 25 °C (unless otherwise specified)
Symbol Parameter Conditions Min. Typ. Max. Unit
V
io
Input offset voltage
at T
min .
≤ T
amb
≤ T
max
3
5
mV
ΔV
io
Input offset voltage drift 2 μV/°C
I
io
Input offset current V
out
= 1.5 V 1 30 nA
I
ib
Input bias current V
out
= 1.5 V 15 100 nA
V
OH
High level output voltage R
L
= 600 Ω
R
L
= 32 Ω
2.87
2.63
V
V
OL
Low level output voltage R
L
= 600 Ω
R
L
= 32 Ω 180
100
mV
A
vd
Large signal voltage gain V
out
= 2 V
pk-pk
R
L
= 600 Ω
R
L
= 32 Ω
35
16
V/mV
GBP Gain bandwidth product R
L
= 600 Ω 4MHz
I
CC
Supply current No load, V
out
= V
CC
/2 1 1.5 mA
CMR Common mode rejection ratio 60 80 dB
SVR Supply voltage rejection ratio V
CC
= 2.7 to 3.3 V 60 80 dB
I
o
Output short-circuit current 50 80 mA
SR Slew rate 0.7 1.3 V/μs
Pm Phase margin at unit gain R
L
= 600 Ω, C
L
=100 pF 68 Degrees
GM Gain margin R
L
= 600 Ω, C
L
=100 pF 12 dB
e
n
Equivalent input noise voltage f = 1 kHz 9
THD Total harmonic distortion V
out
=2 V
pk-pk
, f = 1 kHz,
A
v
=1, R
L
= 600 Ω
0.005 %
nV
Hz
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